Part Details for IPD80N04S306ATMA1 by Infineon Technologies AG
Overview of IPD80N04S306ATMA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD80N04S306ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD80N04S306ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 90A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.7973 / $1.9000 | Buy Now |
DISTI #
IPD80N04S306ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD80N04S306ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.8610 / $1.0524 | Buy Now |
DISTI #
726-IPD80N04S306ATMA
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Mouser Electronics | MOSFET MOSFET_(20V 40V) RoHS: Compliant | 0 |
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Order Now | |
DISTI #
SP000261220
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EBV Elektronik | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) TO-252 (Alt: SP000261220) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 40V 90A TO252-3 | 43660 |
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$3.7690 / $5.6530 | Buy Now |
Part Details for IPD80N04S306ATMA1
IPD80N04S306ATMA1 CAD Models
IPD80N04S306ATMA1 Part Data Attributes
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IPD80N04S306ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD80N04S306ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.0052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPD80N04S306ATMA1
This table gives cross-reference parts and alternative options found for IPD80N04S306ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD80N04S306ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPD80N04S3-06 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD80N04S306ATMA1 vs IPD80N04S3-06 |
IPD036N04LGBTMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD80N04S306ATMA1 vs IPD036N04LGBTMA1 |
IPD036N04LG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD80N04S306ATMA1 vs IPD036N04LG |
DMTH4005SK3Q-13 | Power Field-Effect Transistor, 95A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Diodes Incorporated | IPD80N04S306ATMA1 vs DMTH4005SK3Q-13 |
IPD036N04LGATMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Infineon Technologies AG | IPD80N04S306ATMA1 vs IPD036N04LGATMA1 |