Part Details for IPD80R1K0CE by Infineon Technologies AG
Overview of IPD80R1K0CE by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD80R1K0CE
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TMOS1439
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Rutronik | N-CH 800V 5,7A 950mOhm TO252-3 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Stock DE - 15000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.6121 / $0.7935 | Buy Now |
|
Win Source Electronics | Metal Oxide Semiconductor Field Effect Transistor | 70000 |
|
$0.5660 / $0.8480 | Buy Now |
Part Details for IPD80R1K0CE
IPD80R1K0CE CAD Models
IPD80R1K0CE Part Data Attributes
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IPD80R1K0CE
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD80R1K0CE
Infineon Technologies AG
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 5.7 A | |
Drain-source On Resistance-Max | 0.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPD80R1K0CE
This table gives cross-reference parts and alternative options found for IPD80R1K0CE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD80R1K0CE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPD80R1K0CEATMA1 | Power Field-Effect Transistor, | Infineon Technologies AG | IPD80R1K0CE vs IPD80R1K0CEATMA1 |