Datasheets
IPD80R1K0CEBTMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

Part Details for IPD80R1K0CEBTMA1 by Infineon Technologies AG

Overview of IPD80R1K0CEBTMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPD80R1K0CEBTMA1

Part # Distributor Description Stock Price Buy
DISTI # IPD80R1K0CEBTMA1CT-ND
DigiKey MOSFET N-CH 800V 5.7A TO252-3 Lead time: 39 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Limited Supply - Call
Buy Now
Rochester Electronics IPD80R1K0 - 800V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 10
  • 1 $0.6256
  • 25 $0.6131
  • 100 $0.5881
  • 500 $0.5630
  • 1,000 $0.5318
$0.5318 / $0.6256 Buy Now
DISTI # SP001100606
EBV Elektronik Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001100606) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPD80R1K0CEBTMA1

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IPD80R1K0CEBTMA1 Part Data Attributes

IPD80R1K0CEBTMA1 Infineon Technologies AG
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IPD80R1K0CEBTMA1 Infineon Technologies AG Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 230 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 5.7 A
Drain-source On Resistance-Max 0.95 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD80R1K0CEBTMA1

This table gives cross-reference parts and alternative options found for IPD80R1K0CEBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD80R1K0CEBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPP06N80C2 Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPD80R1K0CEBTMA1 vs SPP06N80C2
SPP06N80C3XK Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPD80R1K0CEBTMA1 vs SPP06N80C3XK
SPP06N80C3XKSA1 Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPD80R1K0CEBTMA1 vs SPP06N80C3XKSA1

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