Part Details for IPD80R1K0CEBTMA1 by Infineon Technologies AG
Overview of IPD80R1K0CEBTMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD80R1K0CEBTMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD80R1K0CEBTMA1CT-ND
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DigiKey | MOSFET N-CH 800V 5.7A TO252-3 Lead time: 39 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IPD80R1K0 - 800V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 10 |
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$0.5318 / $0.6256 | Buy Now |
DISTI #
SP001100606
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EBV Elektronik | Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001100606) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD80R1K0CEBTMA1
IPD80R1K0CEBTMA1 CAD Models
IPD80R1K0CEBTMA1 Part Data Attributes
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IPD80R1K0CEBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD80R1K0CEBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 5.7 A | |
Drain-source On Resistance-Max | 0.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPD80R1K0CEBTMA1
This table gives cross-reference parts and alternative options found for IPD80R1K0CEBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD80R1K0CEBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPP06N80C2 | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPD80R1K0CEBTMA1 vs SPP06N80C2 |
SPP06N80C3XK | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPD80R1K0CEBTMA1 vs SPP06N80C3XK |
SPP06N80C3XKSA1 | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPD80R1K0CEBTMA1 vs SPP06N80C3XKSA1 |