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Power Field-Effect Transistor, 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
16AC3361
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Newark | Mosfet, N-Ch, 800V, 17A, 150Deg C, 101W, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD80R280P7ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 96 |
|
$2.0400 / $3.2000 | Buy Now |
DISTI #
86AK5237
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Newark | Mosfet, N-Ch, 800V, 17A, To-252 Rohs Compliant: Yes |Infineon IPD80R280P7ATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$1.6300 / $1.6600 | Buy Now |
DISTI #
IPD80R280P7ATMA1CT-ND
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DigiKey | MOSFET N-CH 800V 17A TO252 Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8494 In Stock |
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$1.3274 / $2.8400 | Buy Now |
DISTI #
16AC3361
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Avnet Americas | Trans MOSFET N-CH 800V 17A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 16AC3361) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 96 Partner Stock |
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$2.2600 / $3.2100 | Buy Now |
DISTI #
IPD80R280P7ATMA1
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Avnet Americas | Trans MOSFET N 800V 17A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R280P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$1.6460 | Buy Now |
DISTI #
726-IPD80R280P7ATMA1
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Mouser Electronics | MOSFET LOW POWER_NEW RoHS: Compliant | 4512 |
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$1.3200 / $2.8000 | Buy Now |
DISTI #
E02:0323_10321419
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Arrow Electronics | Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Date Code: 2151 | Europe - 2500 |
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$1.2900 / $1.3330 | Buy Now |
DISTI #
V72:2272_16563309
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Arrow Electronics | Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2304 Container: Cut Strips | Americas - 1851 |
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$1.3620 / $1.9640 | Buy Now |
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Future Electronics | Single N-Channel 800 V 0.28 Ohm 36 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 0Reel |
|
$1.3600 | Buy Now |
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Future Electronics | Single N-Channel 800 V 0.28 Ohm 36 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 0Reel |
|
$1.3600 | Buy Now |
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IPD80R280P7ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD80R280P7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 43 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 45 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |