Part Details for IPD80R2K7C3AATMA1 by Infineon Technologies AG
Overview of IPD80R2K7C3AATMA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD80R2K7C3AATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8911
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Newark | Mosfet, Aec-Q101, N-Ch, 800V, 2A, 42W Rohs Compliant: Yes |Infineon IPD80R2K7C3AATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3152 |
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$1.6500 | Buy Now |
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DISTI #
86AK5236
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Newark | Mosfet, N-Ch, 800V, 2A, To-252 Rohs Compliant: Yes |Infineon IPD80R2K7C3AATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7390 | Buy Now |
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DISTI #
448-IPD80R2K7C3AATMA1CT-ND
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DigiKey | MOSFET N-CH TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4135 In Stock |
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$0.6069 / $1.6200 | Buy Now |
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DISTI #
IPD80R2K7C3AATMA1
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Avnet Americas | AUTOMOTIVE - Tape and Reel (Alt: IPD80R2K7C3AATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.7525 | Buy Now |
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DISTI #
726-IPD80R2K7C3AATMA
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Mouser Electronics | MOSFET AUTOMOTIVE RoHS: Compliant | 3901 |
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$0.6060 / $1.5900 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Container: Reel | 0Reel |
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$0.5950 / $0.6200 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Container: Reel | 0Reel |
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$0.5950 / $0.6200 | Buy Now |
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DISTI #
75724365
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Verical | Trans MOSFET N-CH 800V 2A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 26 Package Multiple: 1 Date Code: 2338 | Americas - 2500 |
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$0.7800 / $1.2450 | Buy Now |
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Ameya Holding Limited | Min Qty: 2500 | 2240 |
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$0.8724 / $0.8993 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH TO252-3 | 1950 |
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RFQ |
Part Details for IPD80R2K7C3AATMA1
IPD80R2K7C3AATMA1 CAD Models
IPD80R2K7C3AATMA1 Part Data Attributes
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IPD80R2K7C3AATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD80R2K7C3AATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 2.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD80R2K7C3AATMA1
This table gives cross-reference parts and alternative options found for IPD80R2K7C3AATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD80R2K7C3AATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD80R2K7C3A | Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Infineon Technologies AG | IPD80R2K7C3AATMA1 vs IPD80R2K7C3A |