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Part Details for IPD80R450P7ATMA1 by Infineon Technologies AG
Overview of IPD80R450P7ATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IPD80R450P7ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
16AC3362
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Newark | Mosfet, N-Ch, 800V, 11A, 150Deg C, 73W, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD80R450P7ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 43 |
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$0.7210 | Buy Now |
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DISTI #
IPD80R450P7ATMA1CT-ND
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DigiKey | MOSFET N-CH 800V 11A TO252 Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
12167 In Stock |
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$0.8605 / $1.9800 | Buy Now |
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DISTI #
IPD80R450P7ATMA1
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Avnet Americas | Trans MOSFET N 800V 11A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R450P7ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$1.0317 | Buy Now |
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DISTI #
16AC3362
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Avnet Americas | Trans MOSFET N 800V 11A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 16AC3362) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 0 |
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$1.9900 / $2.7600 | Buy Now |
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DISTI #
726-IPD80R450P7ATMA1
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Mouser Electronics | MOSFET LOW POWER_NEW | 6057 |
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$0.8600 / $1.9500 | Buy Now |
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Future Electronics | Single N-Channel 800 V 0.45 Ohm 24 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 2500Reel |
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$0.8350 | Buy Now |
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Future Electronics | Single N-Channel 800 V 0.45 Ohm 24 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 0Reel |
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$0.8350 | Buy Now |
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Rochester Electronics | IPD80R450P7 - 800V CoolMOS P7 Power Device RoHS: Compliant Status: Active Min Qty: 1 | 20 |
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$0.8251 / $0.9707 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 2478 |
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$2.2471 / $2.4175 | Buy Now |
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DISTI #
SP001422626
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EBV Elektronik | Trans MOSFET N 800V 11A 3-Pin TO-252 T/R (Alt: SP001422626) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD80R450P7ATMA1
IPD80R450P7ATMA1 CAD Models
IPD80R450P7ATMA1 Part Data Attributes
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IPD80R450P7ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD80R450P7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks, 1 Day | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 29 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 29 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |