Part Details for IPD80R4K5P7ATMA1 by Infineon Technologies AG
Overview of IPD80R4K5P7ATMA1 by Infineon Technologies AG
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IPD80R4K5P7ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD80R4K5P7ATMA1CT-ND
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DigiKey | MOSFET N-CH 800V 1.5A TO252 Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2554 / $0.7700 | Buy Now |
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DISTI #
IPD80R4K5P7ATMA1
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Avnet Americas | Trans MOSFET N 800V 1.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R4K5P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$0.3167 | Buy Now |
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DISTI #
726-IPD80R4K5P7ATMA1
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Mouser Electronics | MOSFET LOW POWER_NEW RoHS: Compliant | 54 |
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$0.2550 / $0.7900 | Buy Now |
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Future Electronics | Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2650 / $0.2850 | Buy Now |
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Future Electronics | Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2650 / $0.2850 | Buy Now |
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Rochester Electronics | IPD80R4K5 - Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 662 |
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$0.2532 / $0.2979 | Buy Now |
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DISTI #
IPD80R4K5P7ATMA1
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Avnet Americas | Trans MOSFET N 800V 1.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R4K5P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$0.3167 | Buy Now |
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DISTI #
IPD80R4K5P7
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TME | Transistor: N-MOSFET, unipolar, 800V, 1A, 13W, PG-TO252-3 Min Qty: 1 | 0 |
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$0.5050 / $1.0960 | RFQ |
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Ameya Holding Limited | Min Qty: 10 | 2490 |
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$0.5473 / $0.7497 | Buy Now |
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DISTI #
IPD80R4K5P7ATMA1
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Avnet Americas | Trans MOSFET N 800V 1.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R4K5P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.3167 | Buy Now |
Part Details for IPD80R4K5P7ATMA1
IPD80R4K5P7ATMA1 CAD Models
IPD80R4K5P7ATMA1 Part Data Attributes
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IPD80R4K5P7ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD80R4K5P7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 2.6 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |