Part Details for IPI086N10N3GXKSA1 by Infineon Technologies AG
Overview of IPI086N10N3GXKSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPI086N10N3GXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1700
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Newark | Mosfet, N-Ch, 100V, 80A, To-262, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0074Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.7V, Power Rohs Compliant: Yes |Infineon IPI086N10N3GXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 636 |
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$0.7910 / $1.8200 | Buy Now |
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DISTI #
IPI086N10N3GXKSA1-ND
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DigiKey | MOSFET N-CH 100V 80A TO262-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
14 In Stock |
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$0.7360 / $1.7500 | Buy Now |
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DISTI #
IPI086N10N3GXKSA1
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Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1) RoHS: Not Compliant Min Qty: 550 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Container: Tube | 0 |
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$0.6870 / $0.8342 | Buy Now |
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Future Electronics | Single N-Channel 100 V 8.6 mOhm 42 nC OptiMOS™ Power Mosfet - I2PAK RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$0.7450 / $0.8250 | Buy Now |
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Future Electronics | Single N-Channel 100 V 8.6 mOhm 42 nC OptiMOS™ Power Mosfet - I2PAK RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 500 Container: Tube | 0Tube |
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$0.7450 / $0.8250 | Buy Now |
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DISTI #
75302661
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Verical | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 2302 | Americas - 700 |
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$1.0850 / $1.5625 | Buy Now |
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DISTI #
IPI086N10N3GXKSA1
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TME | Transistor: N-MOSFET, unipolar, 100V, 80A, 125W, PG-TO262-3 Min Qty: 1 | 0 |
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$0.8700 / $1.1700 | RFQ |
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Ameya Holding Limited | Min Qty: 5 | 1350 |
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$1.8442 | Buy Now |
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Ameya Holding Limited | Single N-Channel 100 V 8.6 mOhm 42 nC OptiMOS™ Power Mosfet - I2PAK | 502 |
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RFQ | |
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DISTI #
SP000683070
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EBV Elektronik | Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-262, Through Hole (Alt: SP000683070) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPI086N10N3GXKSA1
IPI086N10N3GXKSA1 CAD Models
IPI086N10N3GXKSA1 Part Data Attributes
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IPI086N10N3GXKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPI086N10N3GXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | GREEN, PLASTIC, TO-262, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0086 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPI086N10N3GXKSA1
This table gives cross-reference parts and alternative options found for IPI086N10N3GXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI086N10N3GXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPI086N10N3G | Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPI086N10N3GXKSA1 vs IPI086N10N3G |