Datasheets
IPN80R900P7ATMA1 by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IPN80R900P7ATMA1 by Infineon Technologies AG

Overview of IPN80R900P7ATMA1 by Infineon Technologies AG

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Price & Stock for IPN80R900P7ATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPN80R900P7ATMA1CT-ND
DigiKey MOSFET N-CHANNEL 800V 6A SOT223 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5760
In Stock
  • 1 $1.2300
  • 10 $1.0050
  • 100 $0.7814
  • 500 $0.6623
  • 1,000 $0.5395
  • 3,000 $0.5079
  • 6,000 $0.4837
  • 9,000 $0.4614
$0.4614 / $1.2300 Buy Now
DISTI # IPN80R900P7ATMA1
Avnet Americas Transistor MOSFET N-CH 800V 6A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN80R900P7ATMA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5710
$0.5710 Buy Now
DISTI # 726-IPN80R900P7ATMA1
Mouser Electronics MOSFET LOW POWER_NEW RoHS: Compliant 18874
  • 1 $1.2300
  • 10 $0.9880
  • 100 $0.7810
  • 500 $0.6620
  • 1,000 $0.5390
  • 3,000 $0.5030
  • 6,000 $0.4880
  • 9,000 $0.4660
$0.4660 / $1.2300 Buy Now
Future Electronics Single N-Channel 800 V 900 mOhm 15 nC CoolMOS™ Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5000
  • 6,000 $0.4850
  • 9,000 $0.4750
$0.4750 / $0.5000 Buy Now
Future Electronics Single N-Channel 800 V 900 mOhm 15 nC CoolMOS™ Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5000
  • 6,000 $0.4850
  • 9,000 $0.4750
$0.4750 / $0.5000 Buy Now
DISTI # IPN80R900P7ATMA1
Avnet Americas Transistor MOSFET N-CH 800V 6A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN80R900P7ATMA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5710
$0.5710 Buy Now
DISTI # IPN80R900P7
TME Transistor: N-MOSFET, unipolar, 800V, 3.9A, 7W, PG-SOT223 Min Qty: 1 0
  • 1 $1.3900
  • 5 $1.2400
  • 20 $1.1000
  • 100 $0.9900
  • 500 $0.9100
$0.9100 / $1.3900 RFQ
Ameya Holding Limited   Min Qty: 750 23980
  • 750 $1.2450
  • 1,500 $1.1830
$1.1830 / $1.2450 Buy Now
DISTI # IPN80R900P7ATMA1
Avnet Americas Transistor MOSFET N-CH 800V 6A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN80R900P7ATMA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5710
$0.5710 Buy Now
CHIPMALL.COM LIMITED MOSFET N-CHANNEL 800V 6A SOT223 2833
  • 1 $0.9869
  • 10 $0.8293
  • 100 $0.6445
  • 500 $0.6001
  • 1,000 $0.5801
$0.5801 / $0.9869 Buy Now
DISTI # SP001665000
EBV Elektronik Transistor MOSFET N-CH 800V 6A 3-Pin SOT-223 T/R (Alt: SP001665000) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 4 Days EBV - 0
Buy Now

Part Details for IPN80R900P7ATMA1

IPN80R900P7ATMA1 CAD Models

IPN80R900P7ATMA1 Part Data Attributes

IPN80R900P7ATMA1 Infineon Technologies AG
Buy Now Datasheet
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IPN80R900P7ATMA1 Infineon Technologies AG Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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