Datasheets
IPP410N30NAKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 44A I(D), 300V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IPP410N30NAKSA1 by Infineon Technologies AG

Overview of IPP410N30NAKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPP410N30NAKSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC9073
Newark Mosfet, N-Ch, 300V, 44A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:44A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPP410N30NAKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1486
  • 1 $8.2400
  • 10 $7.4300
  • 25 $6.7300
  • 50 $6.3100
  • 100 $5.8900
  • 250 $4.9100
  • 500 $4.7700
$4.7700 / $8.2400 Buy Now
DISTI # 448-IPP410N30NAKSA1-ND
DigiKey MOSFET N-CH 300V 44A TO220-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube 463
In Stock
  • 1 $9.7000
  • 50 $7.7440
  • 100 $6.9288
  • 500 $6.1136
  • 1,000 $5.5023
$5.5023 / $9.7000 Buy Now
DISTI # IPP410N30NAKSA1
Avnet Americas MV POWER MOS - Rail/Tube (Alt: IPP410N30NAKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 500 $6.2549
$6.2549 Buy Now
DISTI # 726-IPP410N30NAKSA1
Mouser Electronics MOSFET MV POWER MOS RoHS: Compliant 709
  • 1 $9.7000
  • 10 $8.3200
  • 25 $6.7000
  • 100 $6.3400
  • 250 $6.3300
  • 500 $5.8500
  • 1,000 $5.5000
$5.5000 / $9.7000 Buy Now
Future Electronics Single N-Channel 300 V 41 mOhm 87 nC OptiMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks Container: Tube 0
Tube
  • 50 $5.7400
$5.7400 Buy Now
Future Electronics Single N-Channel 300 V 41 mOhm 87 nC OptiMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks Container: Tube 0
Tube
  • 50 $5.7400
$5.7400 Buy Now
Future Electronics Single N-Channel 300 V 41 mOhm 87 nC OptiMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 20 Weeks Container: Tube 0
Tube
  • 500 $5.7400
$5.7400 Buy Now
DISTI # 77832032
Verical Trans MOSFET N-CH 300V 44A 3-Pin(3+Tab) TO-220 Tube Min Qty: 500 Package Multiple: 500 Date Code: 2348 Americas - 22500
  • 500 $6.4970
$6.4970 Buy Now
DISTI # 71241808
Verical Trans MOSFET N-CH 300V 44A 3-Pin(3+Tab) TO-220 Tube Min Qty: 3 Package Multiple: 1 Date Code: 2244 Americas - 894
  • 3 $11.6625
  • 10 $8.6375
  • 50 $8.0625
  • 100 $7.1625
  • 200 $6.6750
  • 500 $6.5125
$6.5125 / $11.6625 Buy Now
DISTI # 22143186
Verical Trans MOSFET N-CH 300V 44A 3-Pin(3+Tab) TO-220 Tube Min Qty: 2 Package Multiple: 1 Americas - 464
  • 2 $8.2671
  • 10 $7.3348
  • 25 $6.0986
  • 100 $5.8119
  • 250 $5.7538
  • 500 $5.4601
  • 1,000 $5.1714
$5.1714 / $8.2671 Buy Now
Rochester Electronics IPP410N30N - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 500
  • 1 $5.8900
  • 25 $5.7700
  • 100 $5.5300
  • 500 $5.3000
  • 1,000 $5.0000
$5.0000 / $5.8900 Buy Now
DISTI # IPP410N30NAKSA1
TME Transistor: N-MOSFET, unipolar, 300V, 44A, 300W, PG-TO220-3 Min Qty: 1 0
  • 1 $7.8900
  • 3 $6.7900
  • 10 $5.4500
  • 100 $4.7300
$4.7300 / $7.8900 RFQ
Ameya Holding Limited   Min Qty: 50 1224
  • 50 $9.4309
  • 100 $9.1234
  • 200 $8.8157
$8.8157 / $9.4309 Buy Now
Ameya Holding Limited Single N-Channel 300 V 41 mOhm 87 nC OptiMOS™ Power Mosfet - TO-220-3 354
RFQ
Chip1Cloud MOSFET N-CH 300V 44A TO220-3 3290
RFQ
DISTI # C1S322001061715
Chip1Stop MOSFET RoHS: Compliant Container: Tube 894
  • 1 $9.3300
  • 10 $6.9100
  • 50 $6.4500
  • 100 $5.7300
  • 200 $5.3400
  • 500 $5.2100
$5.2100 / $9.3300 Buy Now
DISTI # SP001082134
EBV Elektronik MV POWER MOS (Alt: SP001082134) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPP410N30NAKSA1

IPP410N30NAKSA1 Part Data Attributes

IPP410N30NAKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPP410N30NAKSA1 Infineon Technologies AG Power Field-Effect Transistor, 44A I(D), 300V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 240 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 176 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPP410N30NAKSA1

This table gives cross-reference parts and alternative options found for IPP410N30NAKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP410N30NAKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP410N30N Power Field-Effect Transistor, 44A I(D), 300V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IPP410N30NAKSA1 vs IPP410N30N
IPB407N30N Power Field-Effect Transistor, 44A I(D), 300V, 0.0407ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Infineon Technologies AG IPP410N30NAKSA1 vs IPB407N30N

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