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Transistors / Power Field-Effect Transistors / IPP60R125C6XKSA1
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IPP60R125C6XKSA1 by:

Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP60R125C6XKSA1 by Infineon Technologies AG

Overview of IPP60R125C6XKSA1 by Infineon Technologies AG

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Price & Stock for IPP60R125C6XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC9082
Newark Mosfet, N-Ch, 600V, 30A, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.11Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPP60R125C6XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2408
  • 1 $6.2500
  • 10 $5.8600
  • 25 $5.4500
  • 50 $5.0600
  • 100 $4.4000
  • 250 $4.1900
  • 500 $3.9800
$3.9800 / $6.2500 Buy Now
DISTI # IPP60R125C6XKSA1-ND
DigiKey MOSFET N-CH 600V 30A TO220-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 469
In Stock
  • 1 $5.5400
  • 50 $4.3922
  • 100 $3.7647
  • 500 $3.3464
  • 1,000 $2.8654
  • 2,000 $2.6980
$2.6980 / $5.5400 Buy Now
DISTI # IPP60R125C6XKSA1
Avnet Americas Trans MOSFET N-CH 600V 30A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP60R125C6XKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 500 $3.5204
  • 600 $3.4168
  • 1,100 $3.3133
  • 2,500 $3.2097
  • 5,000 $3.1062
  • 25,000 $3.0027
  • 50,000 $2.8991
$2.8991 / $3.5204 Buy Now
DISTI # V99:2348_06377356
Arrow Electronics Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2216 Americas - 640
  • 1 $3.9470
  • 10 $3.9080
  • 25 $3.8760
  • 50 $3.4920
  • 100 $3.1960
  • 250 $3.1640
  • 500 $2.7810
$2.7810 / $3.9470 Buy Now
Future Electronics MOSFET N-Ch 650V 30A TO220-3 CoolMOS C6 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube 0
Tube
  • 500 $2.9200
$2.9200 Buy Now
DISTI # 62331681
Verical Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube Min Qty: 3 Package Multiple: 1 Date Code: 2216 Americas - 640
  • 3 $3.9470
  • 10 $3.9080
  • 25 $3.8760
  • 50 $3.4920
  • 100 $3.1960
  • 250 $3.1640
  • 500 $2.7810
$2.7810 / $3.9470 Buy Now
Rochester Electronics IPP60R125 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 356
  • 1 $3.0200
  • 25 $2.9600
  • 100 $2.8400
  • 500 $2.7200
  • 1,000 $2.5700
$2.5700 / $3.0200 Buy Now
DISTI # IPP60R125C6XKSA1
Avnet Americas Trans MOSFET N-CH 600V 30A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP60R125C6XKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 500 $3.5204
  • 600 $3.4168
  • 1,100 $3.3133
  • 2,500 $3.2097
  • 5,000 $3.1062
  • 25,000 $3.0027
  • 50,000 $2.8991
$2.8991 / $3.5204 Buy Now
DISTI # IPP60R125C6XKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 30A, 219W, PG-TO220-3 Min Qty: 1 0
  • 1 $5.7900
  • 3 $5.2000
  • 10 $4.8600
  • 50 $4.6400
$4.6400 / $5.7900 RFQ
DISTI # SP000685844
EBV Elektronik Trans MOSFET N-CH 600V 30A 3-Pin TO-220 Tube (Alt: SP000685844) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 2 Weeks, 2 Days EBV - 0
Buy Now
DISTI # 2726068
element14 Asia-Pacific MOSFET, N-CH, 600V, 30A, TO-220-3 RoHS: Compliant Min Qty: 1 Container: Each 2408
  • 1 $5.8415
  • 10 $4.6393
  • 100 $3.9238
  • 500 $3.3190
  • 1,000 $2.8396
$2.8396 / $5.8415 Buy Now
DISTI # 2726068
Farnell MOSFET, N-CH, 600V, 30A, TO-220-3 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 2408
  • 1 $5.5109
  • 10 $3.9614
  • 100 $3.3490
  • 500 $2.8367
  • 1,000 $2.4243
$2.4243 / $5.5109 Buy Now
LCSC 600V 30A 125m14.5A10V 219W 3.5V960uA 1PCSNChannel TO-220-3 MOSFETs ROHS 20
  • 1 $5.2227
$5.2227 Buy Now

Part Details for IPP60R125C6XKSA1

IPP60R125C6XKSA1 CAD Models

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IPP60R125C6XKSA1 Part Data Attributes:

Parametric Data
IPP60R125C6XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPP60R125C6XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 636 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 89 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPP60R125C6XKSA1

This table gives cross-reference parts and alternative options found for IPP60R125C6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R125C6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHB28N60EF-GE3 Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 Vishay Intertechnologies IPP60R125C6XKSA1 vs SIHB28N60EF-GE3
SIHB30N60E-GE3 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 Vishay Intertechnologies IPP60R125C6XKSA1 vs SIHB30N60E-GE3
SIHP28N65EF-GE3 Power Field-Effect Transistor, 28A I(D), 650V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPP60R125C6XKSA1 vs SIHP28N65EF-GE3
SIHW30N60E-GE3 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, Vishay Intertechnologies IPP60R125C6XKSA1 vs SIHW30N60E-GE3
IPW60R125C6 Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPP60R125C6XKSA1 vs IPW60R125C6
SIHB30N60E-E3 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Vishay Intertechnologies IPP60R125C6XKSA1 vs SIHB30N60E-E3
SIHP28N65E-GE3 Power Field-Effect Transistor, 28A I(D), 650V, 0.122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPP60R125C6XKSA1 vs SIHP28N65E-GE3
R6030ENZ4C13 Power Field-Effect Transistor, ROHM Semiconductor IPP60R125C6XKSA1 vs R6030ENZ4C13
IPW60R125C6FKSA1 Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPP60R125C6XKSA1 vs IPW60R125C6FKSA1
FMP30N60S1FD Power Field-Effect Transistor Fuji Electric Co Ltd IPP60R125C6XKSA1 vs FMP30N60S1FD

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