Part Details for IPP60R160C6 by Infineon Technologies AG
Overview of IPP60R160C6 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP60R160C6
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
726-IPP60R160C6
|
Mouser Electronics | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 RoHS: Compliant | 0 |
|
$1.8900 / $3.9000 | Order Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 23.8A I(D), 600V, 0.16OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 16 |
|
$2.1150 / $4.2300 | Buy Now |
|
DISTI #
TMOSP9923
|
Rutronik | N-CH 600V 23A 160mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 100 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$1.8800 / $2.4300 | Buy Now |
|
|
Wuhan P&S | 600V,23.8A,N channel Power MOSFET Min Qty: 1 | 50 |
|
$1.8100 / $2.5300 | Buy Now |
Part Details for IPP60R160C6
IPP60R160C6 CAD Models
IPP60R160C6 Part Data Attributes
|
|
IPP60R160C6
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPP60R160C6
Infineon Technologies AG
Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 497 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 23.8 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 176 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPP60R160C6
This table gives cross-reference parts and alternative options found for IPP60R160C6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R160C6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW60R160C6XK | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPP60R160C6 vs IPW60R160C6XK |
| IPP60R160C6XKSA1 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP60R160C6 vs IPP60R160C6XKSA1 |
| IPW60R160C6 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPP60R160C6 vs IPW60R160C6 |
| SPP24N60C3HKSA1 | Power Field-Effect Transistor, 24.3A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP60R160C6 vs SPP24N60C3HKSA1 |