Datasheets
IPT010N08NM5ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPT010N08NM5ATMA1 by Infineon Technologies AG

Overview of IPT010N08NM5ATMA1 by Infineon Technologies AG

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for IPT010N08NM5ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 40AJ7230
Newark Mosfet, N-Ch, 10V, 425A, Hsof, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:425A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Qualification:-Rohs Compliant: Yes |Infineon IPT010N08NM5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1643
  • 1 $7.5200
  • 10 $6.4400
  • 25 $5.8300
  • 50 $5.6100
  • 100 $5.3700
  • 250 $5.0400
  • 500 $4.7300
$4.7300 / $7.5200 Buy Now
DISTI # 448-IPT010N08NM5ATMA1CT-ND
DigiKey TRENCH 40<-<100V PG-HSOF-8 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3683
In Stock
  • 1 $7.2300
  • 10 $6.1970
  • 100 $5.1642
  • 500 $4.5567
  • 1,000 $4.1010
  • 2,000 $3.8428
$3.8428 / $7.2300 Buy Now
DISTI # IPT010N08NM5ATMA1
Avnet Americas Transistor Power MOSFET N-Channel 80V 425A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT010N08NM5ATMA1) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel 2000
  • 2,000 $4.6619
$4.6619 Buy Now
DISTI # 726-IPT010N08NM5ATM1
Mouser Electronics MOSFET TRENCH 40<-<100V RoHS: Compliant 678
  • 1 $7.2300
  • 10 $6.2000
  • 25 $6.0800
  • 100 $5.1700
  • 250 $5.1600
  • 500 $4.5600
  • 1,000 $4.1100
  • 2,000 $3.8400
$3.8400 / $7.2300 Buy Now
Future Electronics N-Channel 80 V 43A (Ta), 425A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOF-8 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 2,000 $3.7700
$3.7700 Buy Now
Future Electronics N-Channel 80 V 43A (Ta), 425A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOF-8 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 2,000 $3.7700
$3.7700 Buy Now
DISTI # 74092662
Verical Trans MOSFET N-CH 80V 43A 9-Pin(8+Tab) HSOF T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2212 Americas - 54000
  • 2,000 $4.8425
$4.8425 Buy Now
DISTI # 69263886
Verical Trans MOSFET N-CH 80V 43A 9-Pin(8+Tab) HSOF T/R Min Qty: 4 Package Multiple: 1 Date Code: 2214 Americas - 411
  • 4 $8.6375
  • 10 $6.3000
  • 50 $5.5875
  • 100 $5.2500
  • 200 $4.9500
$4.9500 / $8.6375 Buy Now
Ameya Holding Limited Infineon IPT010N08NM5ATMA1 339
RFQ
Ameya Holding Limited   Min Qty: 500 1626
  • 500 $8.7816
  • 1,000 $8.3439
$8.3439 / $8.7816 Buy Now
DISTI # C1S322000835317
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 411
  • 1 $6.9600
  • 10 $5.0700
  • 50 $4.5000
  • 100 $4.2300
  • 200 $3.9800
$3.9800 / $6.9600 Buy Now
DISTI # SP005560711
EBV Elektronik Transistor Power MOSFET N-Channel 80V 425A 8-Pin HSOF T/R (Alt: SP005560711) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPT010N08NM5ATMA1

IPT010N08NM5ATMA1 CAD Models

IPT010N08NM5ATMA1 Part Data Attributes

IPT010N08NM5ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPT010N08NM5ATMA1 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 817 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 425 A
Drain-source On Resistance-Max 0.00105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JESD-30 Code R-PSSO-F8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 1700 A
Reference Standard IEC-61249-2-21; IEC-68-1
Surface Mount YES
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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