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Part Details for IPT012N08N5 by Infineon Technologies AG
Overview of IPT012N08N5 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPT012N08N5
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 300A I(D), 80V, 0.0012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1600 |
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$5.4450 / $10.8900 | Buy Now |
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DISTI #
TMOSP11574
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Rutronik | N-CH 80V 300A 1,2mOhm HSOF-8 RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Stock DE - 6000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$3.1100 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 2000 |
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$3.6300 / $5.2400 | Buy Now |
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LCSC | HSOF-8 MOSFETs ROHS | 2580 |
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$2.7633 / $3.1602 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R / N-channel, normal level | 121212 |
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$2.2610 / $3.3920 | Buy Now |
Part Details for IPT012N08N5
IPT012N08N5 CAD Models
IPT012N08N5 Part Data Attributes:
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IPT012N08N5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPT012N08N5
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HSOF-8-1, 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 817 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 300 A | |
| Drain-source On Resistance-Max | 0.0012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JESD-30 Code | R-PSSO-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 1200 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPT012N08N5
This table gives cross-reference parts and alternative options found for IPT012N08N5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPT012N08N5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IAUT300N08S5N012ATMA2 | Power Field-Effect Transistor, | Infineon Technologies AG | IPT012N08N5 vs IAUT300N08S5N012ATMA2 |
| IAUS300N08S5N012ATMA1 | Power Field-Effect Transistor, | Infineon Technologies AG | IPT012N08N5 vs IAUS300N08S5N012ATMA1 |