Part Details for IPT012N08NF2S by Infineon Technologies AG
Overview of IPT012N08NF2S by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPT012N08NF2S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
STDMOS1472
|
Rutronik | NCH 80V 351A 2,6mOhm TOLL (HSOF-8) RoHS: Compliant Min Qty: 1800 Package Multiple: 1800 Container: Reel |
Stock DE - 1850 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$2.5900 / $3.2500 | Buy Now |
Part Details for IPT012N08NF2S
IPT012N08NF2S CAD Models
IPT012N08NF2S Part Data Attributes
|
|
IPT012N08NF2S
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPT012N08NF2S
Infineon Technologies AG
Power Field-Effect Transistor, 351A I(D), 80V, 0.00123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HSOF-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 374 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 351 A | |
| Drain-source On Resistance-Max | 0.00123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 83 pF | |
| JESD-30 Code | R-PSSO-F8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 1404 A | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |