Part Details for IPT017N10NF2S by Infineon Technologies AG
Overview of IPT017N10NF2S by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IPT017N10NF2S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STDMOS1490
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Rutronik | NCH 100V 294A 1,7mOhm TOLL (HSOF-8) RoHS: Compliant Min Qty: 1800 Package Multiple: 1800 Container: Reel |
Stock DE - 1850 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$2.5900 / $3.4100 | Buy Now |
Part Details for IPT017N10NF2S
IPT017N10NF2S CAD Models
IPT017N10NF2S Part Data Attributes
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IPT017N10NF2S
Infineon Technologies AG
Buy Now
Datasheet
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IPT017N10NF2S
Infineon Technologies AG
Power Field-Effect Transistor, 294A I(D), 100V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | HSOF-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 225 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 294 A | |
Drain-source On Resistance-Max | 0.00175 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 62 pF | |
JESD-30 Code | R-PSSO-F8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 1176 A | |
Reference Standard | IEC-61249-2-21 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |