Part Details for IPT020N10N3ATMA1 by Infineon Technologies AG
Overview of IPT020N10N3ATMA1 by Infineon Technologies AG
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Price & Stock for IPT020N10N3ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50Y2079
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Newark | Mosfet, N-Ch, 100V, 300A, Hsof, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:300A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPT020N10N3ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3370 |
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$5.0100 / $8.8400 | Buy Now |
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DISTI #
IPT020N10N3ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 300A 8HSOF Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
12699 In Stock |
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$4.5199 / $8.5000 | Buy Now |
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DISTI #
IPT020N10N3ATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 300A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT020N10N3ATMA1) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$4.7759 / $5.8372 | Buy Now |
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DISTI #
726-IPT020N10N3ATMA1
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 4920 |
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$4.3400 / $8.4400 | Buy Now |
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DISTI #
E02:0323_07287256
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Arrow Electronics | Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks Date Code: 2352 | Europe - 10000 |
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$4.1365 | Buy Now |
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DISTI #
V72:2272_06377693
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Arrow Electronics | Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2230 Container: Cut Strips | Americas - 588 |
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$4.5370 / $8.3410 | Buy Now |
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Future Electronics | Single N-Channel 100 V 2 mOhm 156 nC OptiMOS™ Power Mosfet - HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Container: Reel | 2000Reel |
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$4.0900 | Buy Now |
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Future Electronics | Single N-Channel 100 V 2 mOhm 156 nC OptiMOS™ Power Mosfet - HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Container: Reel | 0Reel |
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$4.3800 | Buy Now |
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DISTI #
76844704
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Verical | Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2352 | Americas - 10000 |
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$4.1585 | Buy Now |
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DISTI #
69267761
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Verical | Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R Min Qty: 4 Package Multiple: 1 Date Code: 2313 | Americas - 3999 |
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$5.3125 / $10.6250 | Buy Now |
Part Details for IPT020N10N3ATMA1
IPT020N10N3ATMA1 CAD Models
IPT020N10N3ATMA1 Part Data Attributes
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IPT020N10N3ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IPT020N10N3ATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-F8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 800 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 300 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 1200 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |