Part Details for IPT111N20NFDATMA1 by Infineon Technologies AG
Overview of IPT111N20NFDATMA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for IPT111N20NFDATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
45AC7168
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Newark | Mosfet, N Ch, 200V, 96A, Hsof-8, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:96A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IPT111N20NFDATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 56 |
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$4.9000 / $5.7900 | Buy Now |
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DISTI #
86AK5281
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Newark | Mosfet, N-Ch, 200V, 96A, Hsof Rohs Compliant: Yes |Infineon IPT111N20NFDATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$4.9100 | Buy Now |
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DISTI #
IPT111N20NFDATMA1CT-ND
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DigiKey | MOSFET N-CH 200V 96A 8HSOF Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2218 In Stock |
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$4.7175 / $8.8800 | Buy Now |
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DISTI #
IPT111N20NFDATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPT111N20NFDATMA1) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel | 2000 |
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$4.9846 / $6.0923 | Buy Now |
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DISTI #
45AC7168
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Avnet Americas | DIFFERENTIATED MOSFETS - Product that comes on tape, but is not reeled (Alt: 45AC7168) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 56 Partner Stock |
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$6.5800 / $9.2200 | Buy Now |
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DISTI #
726-IPT111N20NFDATMA
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 3007 |
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$4.7100 / $8.8800 | Buy Now |
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DISTI #
E02:0323_10181633
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Arrow Electronics | Trans MOSFET N-CH 200V 96A 9-Pin(8+Tab) HSOF T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks Date Code: 2405 | Europe - 12000 |
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$3.8285 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 200V 96A Automotive T/R RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 2000Reel |
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$3.3300 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 200V 96A Automotive T/R RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$4.7800 | Buy Now |
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DISTI #
79002642
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Verical | Trans MOSFET N-CH 200V 96A 9-Pin(8+Tab) HSOF T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2410 | Americas - 12000 |
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$3.8199 | Buy Now |
Part Details for IPT111N20NFDATMA1
IPT111N20NFDATMA1 CAD Models
IPT111N20NFDATMA1 Part Data Attributes
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IPT111N20NFDATMA1
Infineon Technologies AG
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Datasheet
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IPT111N20NFDATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-F2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 375 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 96 A | |
| Drain-source On Resistance-Max | 0.0111 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 9.4 pF | |
| JESD-30 Code | R-PSSO-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 384 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |