Datasheets
IPW60R120P7XKSA1 by:

Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Part Details for IPW60R120P7XKSA1 by Infineon Technologies AG

Overview of IPW60R120P7XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPW60R120P7XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7141
Newark Mosfet, N-Ch, 600V, 26A, 95W, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:26A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.1Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPW60R120P7XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $4.5200
  • 10 $3.8100
  • 25 $3.5900
  • 50 $3.3400
  • 100 $3.0800
  • 480 $2.9000
  • 720 $2.7400
$2.7400 / $4.5200 Buy Now
DISTI # 448-IPW60R120P7XKSA1-ND
DigiKey MOSFET N-CH 600V 26A TO247-3 Min Qty: 1 Lead time: 20 Weeks Container: Tube Temporarily Out of Stock
  • 1 $4.3600
  • 30 $3.4550
  • 120 $2.9615
  • 510 $2.6325
  • 1,020 $2.2540
  • 2,010 $2.1224
$2.1224 / $4.3600 Buy Now
DISTI # IPW60R120P7XKSA1
Avnet Americas Transistor MOSFET N-CH 600V 26A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R120P7XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 240 $2.5250
$2.5250 Buy Now
DISTI # 726-IPW60R120P7XKSA1
Mouser Electronics MOSFET HIGH POWER_NEW RoHS: Compliant 248
  • 1 $4.4500
  • 10 $4.1000
  • 25 $3.5300
  • 100 $3.0300
  • 480 $2.2500
  • 1,200 $2.1200
$2.1200 / $4.4500 Buy Now
Future Electronics Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 1 $2.4100
  • 30 $2.3100
  • 100 $2.2500
  • 300 $2.2000
  • 1,000 $2.0800
$2.0800 / $2.4100 Buy Now
Future Electronics Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.2000
  • 480 $2.1600
  • 720 $2.1400
  • 960 $2.1300
  • 1,200 $2.0800
$2.0800 / $2.2000 Buy Now
Rochester Electronics IPW60R120 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 170
  • 1 $2.3800
  • 25 $2.3300
  • 100 $2.2300
  • 500 $2.1400
  • 1,000 $2.0200
$2.0200 / $2.3800 Buy Now
DISTI # IPW60R120P7XKSA1
Avnet Americas Transistor MOSFET N-CH 600V 26A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R120P7XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 240 $2.5250
$2.5250 Buy Now
Ameya Holding Limited   Min Qty: 30 1170
  • 30 $4.2769
  • 60 $4.1486
  • 120 $4.0241
$4.0241 / $4.2769 Buy Now
Ameya Holding Limited Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - TO-247-3 121
RFQ
DISTI # SP001658382
EBV Elektronik Transistor MOSFET N-CH 600V 26A 3-Pin TO-247 Tube (Alt: SP001658382) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPW60R120P7XKSA1

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IPW60R120P7XKSA1 Part Data Attributes:

IPW60R120P7XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW60R120P7XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 82 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 78 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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