Datasheets
IPW65R037C6FKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 650V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IPW65R037C6FKSA1 by Infineon Technologies AG

Overview of IPW65R037C6FKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPW65R037C6FKSA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y2087
Newark Power Mosfet, N Channel, 83.2 A, 650 V, 0.033 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon IPW65R037C6FKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 484
  • 1 $19.2200
  • 10 $17.1500
  • 25 $16.7400
  • 50 $15.9200
  • 100 $15.1400
  • 480 $14.6200
  • 720 $13.8500
$13.8500 / $19.2200 Buy Now
DISTI # IPW65R037C6FKSA1-ND
DigiKey MOSFET N-CH 650V 83.2A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 51
In Stock
  • 1 $11.7400
  • 30 $9.8460
$9.8460 / $11.7400 Buy Now
DISTI # IPW65R037C6FKSA1
Avnet Americas Trans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R037C6FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 240 $13.3904
  • 300 $12.9966
  • 540 $12.6027
  • 1,200 $12.2089
  • 2,400 $11.8150
  • 12,000 $11.4212
  • 24,000 $11.0274
$11.0274 / $13.3904 Buy Now
DISTI # 726-IPW65R037C6FKSA1
Mouser Electronics MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 RoHS: Compliant 97
  • 1 $11.7400
  • 25 $9.8500
  • 240 $9.8400
$9.8400 / $11.7400 Buy Now
Future Electronics Single N-Channel 650 V 37 mOhm 330 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks Container: Tube 1200
Tube
  • 30 $12.4800
$12.4800 Buy Now
Future Electronics Single N-Channel 650 V 37 mOhm 330 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks Container: Tube 0
Tube
  • 30 $12.4800
$12.4800 Buy Now
DISTI # 69272949
Verical Trans MOSFET N-CH 700V 83.2A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2327 Americas - 659
  • 1 $11.1833
  • 10 $11.1639
  • 25 $9.6298
  • 50 $9.6196
  • 100 $9.5237
  • 480 $9.4278
  • 720 $9.3340
$9.3340 / $11.1833 Buy Now
Rochester Electronics IPW60R0370 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 9
  • 1 $11.4900
  • 25 $11.2600
  • 100 $10.8000
  • 500 $10.3400
  • 1,000 $9.7600
$9.7600 / $11.4900 Buy Now
DISTI # IPW65R037C6FKSA1
TME Transistor: N-MOSFET, unipolar, 650V, 83.2A, 500W, PG-TO247-3 Min Qty: 1 0
  • 1 $15.6700
  • 30 $11.7800
  • 60 $10.9900
  • 90 $10.5300
$10.5300 / $15.6700 RFQ
Ameya Holding Limited   Min Qty: 1 25
  • 1 $19.4649
$19.4649 Buy Now
DISTI # SP000756284
EBV Elektronik Power MOSFET, N Channel, 650 V, 83.2 A, 0.037 ohm, TO-247, Through Hole (Alt: SP000756284) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPW65R037C6FKSA1

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IPW65R037C6FKSA1 Part Data Attributes

IPW65R037C6FKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW65R037C6FKSA1 Infineon Technologies AG Power Field-Effect Transistor, 650V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 2185 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain-source On Resistance-Max 0.037 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 297 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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