Datasheets
IPW80R280P7 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPW80R280P7 by Infineon Technologies AG

Overview of IPW80R280P7 by Infineon Technologies AG

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Price & Stock for IPW80R280P7

Part # Distributor Description Stock Price Buy
DISTI # IPW80R280P7
TME Transistor: N-MOSFET, unipolar, 800V, 10.6A, 101W, PG-TO247-3 Min Qty: 1 112
  • 1 $4.8400
  • 3 $4.3600
  • 10 $3.8500
  • 30 $3.4600
$3.4600 / $4.8400 Buy Now

Part Details for IPW80R280P7

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IPW80R280P7 Part Data Attributes

IPW80R280P7 Infineon Technologies AG
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IPW80R280P7 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 43 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 101 W
Pulsed Drain Current-Max (IDM) 45 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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