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Transistors / Power Field-Effect Transistors / IRF1010ESTRLPBF
Datasheets
IRF1010ESTRLPBF by:

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF1010ESTRLPBF by Infineon Technologies AG

Overview of IRF1010ESTRLPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation

Price & Stock for IRF1010ESTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 13AC9169
Newark Mosfet, N-Ch, 60V, 84A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:84A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.012Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Infineon IRF1010ESTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 386
  • 1 $1.7300
  • 10 $1.4600
  • 25 $1.3800
  • 50 $1.3000
  • 100 $1.2100
  • 250 $1.1900
  • 500 $1.1500
  • 1,600 $0.9110
$0.9110 / $1.7300 Buy Now
DISTI # IRF1010ESTRLPBFCT-ND
DigiKey MOSFET N-CH 60V 84A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2694
In Stock
  • 1 $1.6300
  • 10 $1.3520
  • 100 $1.0757
  • 800 $0.9102
  • 1,600 $0.7723
  • 2,400 $0.7337
  • 5,600 $0.7061
$0.7061 / $1.6300 Buy Now
DISTI # IRF1010ESTRLPBF
Avnet Americas Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1010ESTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 800 $0.7738
  • 1,600 $0.7511
  • 3,200 $0.7283
  • 4,800 $0.7056
  • 6,400 $0.6828
  • 8,000 $0.6600
  • 80,000 $0.6373
$0.6373 / $0.7738 Buy Now
DISTI # 942-IRF1010ESTRLPBF
Mouser Electronics MOSFET MOSFT 60V 83A 12mOhm 86.6nC RoHS: Compliant 1867
  • 1 $1.4200
  • 10 $1.2100
  • 100 $0.9990
  • 250 $0.9940
  • 500 $0.9910
  • 800 $0.7590
  • 2,400 $0.7170
  • 4,800 $0.7060
$0.7060 / $1.4200 Buy Now
DISTI # E02:0323_00176574
Arrow Electronics Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2405 Europe - 16000
  • 800 $0.6963
  • 2,400 $0.6635
  • 4,800 $0.6554
$0.6554 / $0.6963 Buy Now
DISTI # V36:1790_13889884
Arrow Electronics Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2351 Americas - 4000
  • 800 $0.7135
  • 2,400 $0.6798
  • 4,800 $0.6709
$0.6709 / $0.7135 Buy Now
DISTI # V72:2272_13889884
Arrow Electronics Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2223 Container: Cut Strips Americas - 163
  • 1 $0.7727
  • 10 $0.7323
  • 25 $0.7250
  • 100 $0.7206
$0.7206 / $0.7727 Buy Now
Future Electronics Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Container: Reel 800
Reel
  • 800 $0.4750
  • 1,600 $0.4650
  • 3,200 $0.4550
  • 4,000 $0.4500
  • 12,000 $0.4350
$0.4350 / $0.4750 Buy Now
Future Electronics Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Container: Reel 0
Reel
  • 800 $0.6750
  • 1,600 $0.6600
  • 2,400 $0.6500
  • 3,200 $0.6450
  • 4,000 $0.6250
$0.6250 / $0.6750 Buy Now
Future Electronics Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Container: Reel 0
Reel
  • 800 $0.6750
  • 1,600 $0.6600
  • 2,400 $0.6500
  • 3,200 $0.6450
  • 4,000 $0.6250
$0.6250 / $0.6750 Buy Now
Future Electronics Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Container: Reel 0
Reel
  • 800 $0.6750
  • 1,600 $0.6600
  • 2,400 $0.6500
  • 3,200 $0.6450
  • 4,000 $0.6250
$0.6250 / $0.6750 Buy Now
DISTI # 80942018
Verical Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2405 Americas - 16000
  • 800 $0.7029
  • 2,400 $0.6698
  • 4,800 $0.6616
$0.6616 / $0.7029 Buy Now
DISTI # 76469234
Verical Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2351 Americas - 4000
  • 800 $0.7135
  • 2,400 $0.6798
  • 4,800 $0.6709
$0.6709 / $0.7135 Buy Now
DISTI # 62190688
Verical Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R Min Qty: 11 Package Multiple: 1 Date Code: 2223 Americas - 163
  • 11 $0.7323
  • 25 $0.7250
  • 100 $0.7206
$0.7206 / $0.7323 Buy Now
DISTI # IRF1010ESTRLPBF
TME Transistor: N-MOSFET, unipolar, 60V, 59A, Idm: 330A, 200W, D2PAK Min Qty: 1 623
  • 1 $1.0200
  • 5 $0.9100
  • 25 $0.8000
  • 100 $0.7300
  • 800 $0.6700
$0.6700 / $1.0200 Buy Now
Ameya Holding Limited   Min Qty: 200 1970
  • 200 $1.5781
  • 400 $1.4991
$1.4991 / $1.5781 Buy Now
CHIPMALL.COM LIMITED 60V N Power MOSFET, D2-Pak 410
  • 1 $2.2265
$2.2265 Buy Now
DISTI # SP001553824
EBV Elektronik Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001553824) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF1010ESTRLPBF

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IRF1010ESTRLPBF Part Data Attributes

Parametric Data
IRF1010ESTRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF1010ESTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 320 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 330 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1010ESTRLPBF

This table gives cross-reference parts and alternative options found for IRF1010ESTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010ESTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1010ESTRLPBF Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010ESTRLPBF vs IRF1010ESTRLPBF
IRF1010ES Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1010ESTRLPBF vs IRF1010ES
IRF1010ESTRRPBF Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010ESTRLPBF vs IRF1010ESTRRPBF
IRF1010ES Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1010ESTRLPBF vs IRF1010ES
Part Number Description Manufacturer Compare
IRF1010ESTRRPBF Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010ESTRLPBF vs IRF1010ESTRRPBF
IRF1010ES Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1010ESTRLPBF vs IRF1010ES
IRF1010ESTRL Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1010ESTRLPBF vs IRF1010ESTRL
IRF1010ES Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1010ESTRLPBF vs IRF1010ES
IRF1010ESTRLPBF Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010ESTRLPBF vs IRF1010ESTRLPBF

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