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Part Details for IRF1010EZSTRLP by Infineon Technologies AG
Overview of IRF1010EZSTRLP by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for IRF1010EZSTRLP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
32AC7467
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Newark | Mosfet, N-Ch, 60V, 84A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:75A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0068Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRF1010EZSTRLP Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
86AK5345
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Newark | Mosfet, N-Ch, 60V, 75A, To-263 Rohs Compliant: Yes |Infineon IRF1010EZSTRLP Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6710 / $0.8380 | Buy Now |
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Bristol Electronics | 98 |
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RFQ | ||
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Quest Components | 78 |
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$1.2089 / $2.1980 | Buy Now | |
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Rochester Electronics | IRF1010 - 75A, 60V, 0.0085ohm, N-Chanel Power MOSFET, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 297 |
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$0.6869 / $0.8081 | Buy Now |
Part Details for IRF1010EZSTRLP
IRF1010EZSTRLP CAD Models
IRF1010EZSTRLP Part Data Attributes
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IRF1010EZSTRLP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF1010EZSTRLP
Infineon Technologies AG
MOSFET N-CH 60V 75A D2PAK
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 99 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |