Part Details for IRF135S203 by Infineon Technologies AG
Overview of IRF135S203 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF135S203
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
34AC1767
|
Newark | Mosfet, N-Ch, 135V, 129A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:129A, Drain Source Voltage Vds:135V, On Resistance Rds(On):0.0067Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRF135S203 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 199 |
|
$2.2900 / $3.3700 | Buy Now |
|
DISTI #
IRF135S203CT-ND
|
DigiKey | MOSFET N-CH 135V 129A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
294 In Stock |
|
$1.5143 / $3.2400 | Buy Now |
|
DISTI #
IRF135S203
|
Avnet Americas | MOSFET 135V 129A 8.4 MOHM 180 NC QG D2-PAK - Tape and Reel (Alt: IRF135S203) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$1.4133 / $1.7162 | Buy Now |
|
DISTI #
942-IRF135S203
|
Mouser Electronics | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg RoHS: Compliant | 809 |
|
$1.5100 / $3.2400 | Buy Now |
|
|
Future Electronics | MOSFET N-CH 135V 129A TO263-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$1.5400 / $1.6000 | Buy Now |
|
|
Future Electronics | MOSFET N-CH 135V 129A TO263-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$1.5400 / $1.6000 | Buy Now |
|
DISTI #
78966622
|
Verical | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2142 | Americas - 15200 |
|
$1.6253 | Buy Now |
|
DISTI #
69842060
|
Verical | Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R Min Qty: 14 Package Multiple: 1 | Americas - 800 |
|
$1.6125 / $2.2500 | Buy Now |
|
DISTI #
IRF135S203
|
TME | Transistor: N-MOSFET, unipolar, 135V, 91A, Idm: 512A, 441W, D2PAK Min Qty: 1 | 0 |
|
$1.4100 / $2.1100 | RFQ |
|
|
Chip1Cloud | Battery powered circuits | MOSFET NCH 135V 129A D2PAK | 2300 |
|
RFQ |
Part Details for IRF135S203
IRF135S203 CAD Models
IRF135S203 Part Data Attributes:
|
|
IRF135S203
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF135S203
Infineon Technologies AG
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 870 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 135 V | |
| Drain Current-Max (ID) | 129 A | |
| Drain-source On Resistance-Max | 0.0084 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 250 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 441 W | |
| Pulsed Drain Current-Max (IDM) | 512 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |