Datasheets
IRF1405ZSTRLPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF1405ZSTRLPBF by International Rectifier

Overview of IRF1405ZSTRLPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF1405ZSTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRF1405ZSTRLPBF-ND
DigiKey PFET, 75A I(D), 55V, 0.0049OHM, Min Qty: 231 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 410
In Stock
  • 231 $1.3000
$1.3000 Buy Now
Rochester Electronics IRF1405 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 410
  • 1 $1.3100
  • 25 $1.2900
  • 100 $1.2300
  • 500 $1.1800
  • 1,000 $1.1200
$1.1200 / $1.3100 Buy Now

Part Details for IRF1405ZSTRLPBF

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IRF1405ZSTRLPBF Part Data Attributes:

IRF1405ZSTRLPBF International Rectifier
Buy Now Datasheet
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IRF1405ZSTRLPBF International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 420 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 600 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1405ZSTRLPBF

This table gives cross-reference parts and alternative options found for IRF1405ZSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405ZSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1405ZSTRRPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs IRF1405ZSTRRPBF
AUIRF1405ZSTRL Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs AUIRF1405ZSTRL
IRF1405ZSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs IRF1405ZSPBF
AUIRF1405ZS Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1405ZSTRLPBF vs AUIRF1405ZS
IRF1405ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs IRF1405ZS
IRF1405ZSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1405ZSTRLPBF vs IRF1405ZSPBF
IRF1405ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs IRF1405ZSTRR
AUIRF1405ZSTRL Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1405ZSTRLPBF vs AUIRF1405ZSTRL
IRF1405ZSTRL Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs IRF1405ZSTRL
AUIRF1405ZS Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs AUIRF1405ZS
Part Number Description Manufacturer Compare
IRF3710PBF Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRF1405ZSTRLPBF vs IRF3710PBF
MTW4N80E 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Motorola Mobility LLC IRF1405ZSTRLPBF vs MTW4N80E
AUIRF3710ZSTRR Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs AUIRF3710ZSTRR
AUIRL3705ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs AUIRL3705ZS
MTP7P06 Power Field-Effect Transistor, 7A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products IRF1405ZSTRLPBF vs MTP7P06
IRF1405ZSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs IRF1405ZSPBF
IRFS3806PBF Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1405ZSTRLPBF vs IRFS3806PBF
SUM110N10-08 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix IRF1405ZSTRLPBF vs SUM110N10-08
AUIRFZ46NS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier IRF1405ZSTRLPBF vs AUIRFZ46NS
RFD14N05SM 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Intersil Corporation IRF1405ZSTRLPBF vs RFD14N05SM

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