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Power Field-Effect Transistor, 75A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9173
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Newark | Mosfet, N-Ch, 40V, 75A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:75A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0015Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRF2804STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1594 |
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$2.0900 / $3.8300 | Buy Now |
DISTI #
IRF2804STRLPBFCT-ND
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DigiKey | MOSFET N-CH 40V 75A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2555 In Stock |
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$1.5971 / $3.4200 | Buy Now |
DISTI #
IRF2804STRLPBF
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Avnet Americas | Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF2804STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 5600 |
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$1.4907 / $1.8102 | Buy Now |
DISTI #
IRF2804STRLPBF
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Avnet Americas | Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF2804STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$1.4907 / $1.8102 | Buy Now |
DISTI #
942-IRF2804STRLPBF
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Mouser Electronics | MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg RoHS: Compliant | 314 |
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$1.5900 / $3.3400 | Buy Now |
DISTI #
E02:0323_00176240
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Arrow Electronics | Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Date Code: 2322 | Europe - 4000 |
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$1.4208 / $1.5177 | Buy Now |
DISTI #
V72:2272_13890724
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Arrow Electronics | Trans MOSFET N-CH Si 40V 270A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2306 Container: Cut Strips | Americas - 350 |
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$1.5840 / $3.2310 | Buy Now |
DISTI #
70017653
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RS | MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 1.8 Milliohms, ID 75A, D2Pak, PD 200W, VGS+/-20V | Infineon IRF2804STRLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$3.1300 | RFQ |
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Future Electronics | Single N-Channel 40V 2 mOhm 160 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.4200 / $1.4700 | Buy Now |
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Future Electronics | Single N-Channel 40V 2 mOhm 160 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.4200 / $1.4700 | Buy Now |
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IRF2804STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF2804STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 540 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.002 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 1080 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF2804STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF2804STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF2804SPBF | Power Field-Effect Transistor, 75A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF2804STRLPBF vs IRF2804SPBF |
IRF2804STRL | Power Field-Effect Transistor, 75A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF2804STRLPBF vs IRF2804STRL |
IRF2804STRRPBF | Power Field-Effect Transistor, 75A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF2804STRLPBF vs IRF2804STRRPBF |
IRF2804STRLPBF | Power Field-Effect Transistor, 75A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF2804STRLPBF vs IRF2804STRLPBF |
IRF2804STRR | Power Field-Effect Transistor, 75A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF2804STRLPBF vs IRF2804STRR |