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Transistors Power Field-Effect Transistors IRF3205

IRF3205
Description: Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Overview of IRF3205 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

CAD Models for IRF3205 by Infineon Technologies AG
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Part Data Attributes for IRF3205 by Infineon Technologies AG
Parametric Data

IRF3205
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TO-220AB, 3 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
264 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
75 A
Drain-source On Resistance-Max
0.008 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Pulsed Drain Current-Max (IDM)
390 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF3205
    Infineon Technologies AG
    Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
    VS

Alternate Parts for IRF3205

This table gives cross-reference parts and alternative options found for IRF3205. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3205, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF3205 vs IRF3205VPBF
HUF75344P3 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF3205 vs HUF75344P3
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3205 vs IRF3205
HUF75344P3 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205 vs HUF75344P3
IRF3205PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRF3205 vs IRF3205PBF
HUF75344P3 N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, 800-TUBE onsemi IRF3205 vs HUF75344P3
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF3205 vs IRF3205VPBF
IRF3205PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205 vs IRF3205PBF
Part Number Description Manufacturer Compare
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF3205 vs IRF3205VPBF
IRF3205 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3205 vs IRF3205
HUF75339P3 75A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205 vs HUF75339P3
HUF75344P3 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC IRF3205 vs HUF75344P3
HUFA75345P3 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205 vs HUFA75345P3
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF3205 vs IRF3205VPBF
IRF3205ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRF3205 vs IRF3205ZPBF
IRF3205ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205 vs IRF3205ZPBF
HUF75343P3 75A, 55V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF3205 vs HUF75343P3
HUF75344P3 N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, 800-TUBE onsemi IRF3205 vs HUF75344P3

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