Part Details for IRF3710STRLPBF by Infineon Technologies AG
Overview of IRF3710STRLPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF3710STRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
32AC0749
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Newark | Planar_Mosfets Rohs Compliant: Yes |Infineon IRF3710STRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 2400 |
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$0.7290 / $0.8850 | Buy Now |
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DISTI #
58M7363
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Newark | Mosfet, N, D2-Pak, Transistor Polarity:N Channel, Continuous Drain Current Id:57A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.023Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Pd:200W, Rohs Compliant: Yes |Infineon IRF3710STRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 592 |
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$1.1800 / $1.9100 | Buy Now |
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DISTI #
86AK5353
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Newark | Mosfet, N-Ch, 100V, 57A, To-263 Rohs Compliant: Yes |Infineon IRF3710STRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.8390 / $0.9990 | Buy Now |
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DISTI #
IRF3710STRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 57A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16349 In Stock |
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$0.8072 / $1.8600 | Buy Now |
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DISTI #
IRF3710STRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3710STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 2400 |
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$0.7284 / $0.8845 | Buy Now |
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DISTI #
IRF3710STRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3710STRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.7284 / $0.8845 | Buy Now |
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DISTI #
942-IRF3710STRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 57A 23mOhm 86.7nC RoHS: Compliant | 55138 |
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$0.7610 / $1.8500 | Buy Now |
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Future Electronics | Single N-Channel 100V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$0.7400 / $0.8050 | Buy Now |
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Future Electronics | Single N-Channel 100V 23 mOhm 130 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$0.4350 / $0.4700 | Buy Now |
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Rochester Electronics | IRF3710S - Planar >= 100V RoHS: Compliant Status: Active Min Qty: 1 | 316 |
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$0.7740 / $0.9106 | Buy Now |
Part Details for IRF3710STRLPBF
IRF3710STRLPBF CAD Models
IRF3710STRLPBF Part Data Attributes
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IRF3710STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3710STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 57 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF3710STRLPBF
This table gives cross-reference parts and alternative options found for IRF3710STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3710STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF3710SPBF | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF3710STRLPBF vs IRF3710SPBF |
| IRF3710S | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF3710STRLPBF vs IRF3710S |
| IRF3710STRLHR | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710STRLPBF vs IRF3710STRLHR |
| IRF3710STRLPBF | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF3710STRLPBF vs IRF3710STRLPBF |
| IRF3710SHR | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3/2 | International Rectifier | IRF3710STRLPBF vs IRF3710SHR |
| IRF3710STRL | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710STRLPBF vs IRF3710STRL |
| IRF3710S | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710STRLPBF vs IRF3710S |
| IRF3710STRR | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710STRLPBF vs IRF3710STRR |
| IRF3710STRRPBF | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF3710STRLPBF vs IRF3710STRRPBF |
| IRF3710STRRPBF | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF3710STRLPBF vs IRF3710STRRPBF |