Datasheets
IRF3710ZPBF by:

Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF3710ZPBF by Infineon Technologies AG

Overview of IRF3710ZPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF3710ZPBF

Part # Distributor Description Stock Price Buy
DISTI # 97K2086
Newark Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:59A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF3710ZPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1203
  • 1 $1.6000
  • 10 $1.3300
  • 100 $1.0600
  • 500 $0.8900
  • 1,000 $0.7630
  • 3,000 $0.7250
  • 10,000 $0.6810
$0.6810 / $1.6000 Buy Now
DISTI # IRF3710ZPBF-ND
DigiKey MOSFET N-CH 100V 59A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 3659
In Stock
  • 1 $1.5500
  • 10 $1.2850
  • 100 $1.0226
  • 500 $0.8652
  • 1,000 $0.7341
  • 2,000 $0.6974
  • 5,000 $0.6712
  • 10,000 $0.6490
$0.6490 / $1.5500 Buy Now
DISTI # IRF3710ZPBF
Avnet Americas Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3710ZPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube 31070
  • 50 $0.7354
  • 60 $0.7138
  • 110 $0.6922
  • 250 $0.6705
  • 500 $0.6489
  • 2,500 $0.6273
  • 5,000 $0.6056
$0.6056 / $0.7354 Buy Now
DISTI # 942-IRF3710ZPBF
Mouser Electronics MOSFET MOSFT 100V 59A 18mOhm 82nC Qg RoHS: Compliant 2337
  • 1 $1.3700
  • 10 $1.1600
  • 100 $0.9400
  • 500 $0.8240
  • 1,000 $0.7340
  • 2,000 $0.6970
  • 5,000 $0.6710
  • 10,000 $0.6490
$0.6490 / $1.3700 Buy Now
DISTI # 70016957
RS MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 14 Milliohms, ID 59A, TO-220AB, PD 160W,-55C | Infineon IRF3710ZPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $1.5600
  • 20 $1.4800
  • 100 $1.4100
  • 200 $1.3300
$1.3300 / $1.5600 RFQ
Future Electronics Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 1000
Tube
  • 50 $0.6050
  • 250 $0.5750
  • 1,000 $0.5500
  • 2,500 $0.5350
  • 6,250 $0.5050
$0.5050 / $0.6050 Buy Now
Future Electronics Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 50
Tube
  • 1 $0.7300
  • 75 $0.7000
  • 250 $0.6750
  • 1,000 $0.6450
  • 3,000 $0.5950
$0.5950 / $0.7300 Buy Now
DISTI # IRF3710ZPBF
Avnet Americas Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3710ZPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube 31070
  • 50 $0.7354
  • 60 $0.7138
  • 110 $0.6922
  • 250 $0.6705
  • 500 $0.6489
  • 2,500 $0.6273
  • 5,000 $0.6056
$0.6056 / $0.7354 Buy Now
DISTI # IRF3710ZPBF
TME Transistor: N-MOSFET, unipolar, 100V, 59A, 160W, TO220AB Min Qty: 1 124
  • 1 $1.0400
  • 3 $0.9300
  • 10 $0.8300
  • 50 $0.7400
  • 250 $0.6900
$0.6900 / $1.0400 Buy Now
Ameya Holding Limited Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 1168
RFQ
Ameya Holding Limited   Min Qty: 50 1316
  • 50 $1.1028
  • 250 $0.9924
$0.9924 / $1.1028 Buy Now
DISTI # IRF3710ZPBF
Avnet Americas Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3710ZPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube 31070
  • 50 $0.7354
  • 60 $0.7138
  • 110 $0.6922
  • 250 $0.6705
  • 500 $0.6489
  • 2,500 $0.6273
  • 5,000 $0.6056
$0.6056 / $0.7354 Buy Now
DISTI # TMOSP11776
Rutronik N-CH 100V 59A 18mOhm TO220 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 27300
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $0.6704
  • 150 $0.6321
  • 300 $0.5937
  • 600 $0.5363
  • 1,000 $0.5171
$0.5171 / $0.6704 Buy Now
DISTI # SP001564400
EBV Elektronik Trans MOSFET N-CH 100V 59A 3-Pin(3+Tab) TO-220AB (Alt: SP001564400) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 1013470
element14 Asia-Pacific MOSFET, N, TO-220 RoHS: Compliant Min Qty: 1 Container: Each 1203
  • 1 $1.6513
  • 10 $1.3724
  • 100 $1.0128
  • 500 $0.9174
  • 1,000 $0.7486
  • 5,000 $0.7192
$0.7192 / $1.6513 Buy Now
DISTI # 1013470
Farnell MOSFET, N, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each 1203
  • 1 $1.7858
  • 10 $1.3612
  • 100 $0.9603
  • 500 $0.8729
  • 1,000 $0.7093
  • 5,000 $0.6881
$0.6881 / $1.7858 Buy Now
New Advantage Corporation Single N-Channel 100 V 18 mOhm 120 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 2100
  • 300 $0.5643
  • 2,100 $0.5267
$0.5267 / $0.5643 Buy Now

Part Details for IRF3710ZPBF

IRF3710ZPBF CAD Models

IRF3710ZPBF Part Data Attributes

IRF3710ZPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF3710ZPBF Infineon Technologies AG Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 59 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF3710ZPBF

This table gives cross-reference parts and alternative options found for IRF3710ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3710ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 International Rectifier IRF3710ZPBF vs AUIRF3710Z
IRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3710ZPBF vs IRF3710Z
IRF3710ZPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRF3710ZPBF vs IRF3710ZPBF
AUIRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRF3710ZPBF vs AUIRF3710Z
IRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF3710ZPBF vs IRF3710Z
Part Number Description Manufacturer Compare
IRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF3710ZPBF vs IRF3710Z
AUIRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRF3710ZPBF vs AUIRF3710Z
IRF3710Z Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3710ZPBF vs IRF3710Z

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