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Part Details for IRF540PBF by Vishay Intertechnologies
Overview of IRF540PBF by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF540PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7322
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Newark | N Channel Mosfet, 100V, 28A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRF540PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 4602 |
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$1.2000 / $1.9000 | Buy Now |
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DISTI #
68X2853
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Newark | Mosfet Transistor, N Channel, 28 A, 100 V, 77 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRF540PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 4700 |
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$1.1100 / $1.8200 | Buy Now |
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DISTI #
IRF540PBF
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Avnet Americas | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF540PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 3799 |
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$0.6604 / $0.8170 | Buy Now |
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DISTI #
63J7322
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Avnet Americas | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7322) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Bulk | 4602 Partner Stock |
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$1.3800 / $1.9000 | Buy Now |
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DISTI #
844-IRF540PBF
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Mouser Electronics | MOSFET 100V N-CH HEXFET RoHS: Compliant | 11576 |
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$0.7090 / $1.6800 | Buy Now |
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DISTI #
70078851
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.077Ohm, ID 28A, TO-220AB, PD 150W, VGS +/-20V | Vishay PCS IRF540PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 62 Weeks, 0 Days Container: Bulk | 513 |
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$1.3100 / $1.7500 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 14600Tube |
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$0.7450 / $0.9200 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.7450 / $0.9200 | Buy Now |
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Quest Components | 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12 |
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$1.8750 / $3.0000 | Buy Now |
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Quest Components | 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 800 |
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$1.9932 / $3.6240 | Buy Now |
Part Details for IRF540PBF
IRF540PBF CAD Models
IRF540PBF Part Data Attributes
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IRF540PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF540PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 120 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540PBF
This table gives cross-reference parts and alternative options found for IRF540PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF540-009 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF540PBF vs IRF540-009 |
| IRF542 | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF540PBF vs IRF542 |
| IRF540 | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF540PBF vs IRF540 |
| IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF540PBF vs IRF540 |
| IRF540 | 27A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | Motorola Mobility LLC | IRF540PBF vs IRF540 |
| IRF542 | POWER, FET | National Semiconductor Corporation | IRF540PBF vs IRF542 |
| IRF542 | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF540PBF vs IRF542 |
| IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF540PBF vs IRF540 |
| IRF540 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF540PBF vs IRF540 |
| IRF540 | 22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | IRF540PBF vs IRF540 |