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Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05W6869
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Newark | Mosfet, N Ch, 100V, 28A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRF540STRRPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.7900 | Buy Now |
DISTI #
31K2163
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Newark | N Channel Mosfet, 100V, 28A Smd-220, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4Vrohs Compliant: Yes |Vishay IRF540STRRPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.2300 / $1.6500 | Buy Now |
DISTI #
IRF540STRRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF540STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.2947 / $1.6447 | Buy Now |
DISTI #
844-IRF540STRRPBF
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Mouser Electronics | MOSFET 100V N-CH HEXFET D2-PAK RoHS: Compliant | 1023 |
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$1.3700 / $2.6500 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 | 0 |
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$1.2800 | Buy Now |
DISTI #
IRF540STRRPBF
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TTI | MOSFET 100V N-CH HEXFET D2-PAK RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$1.2400 / $1.3600 | Buy Now |
DISTI #
IRF540STRRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF540STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$1.2947 / $1.6447 | Buy Now |
DISTI #
IRF540STRRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF540STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$1.2947 / $1.6447 | Buy Now |
DISTI #
IRF540STRRPBF
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Avnet Asia | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF540STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
IRF540STRRPBF
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EBV Elektronik | Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF540STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
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IRF540STRRPBF
Vishay Intertechnologies
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Datasheet
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Compare Parts:
IRF540STRRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF540STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF540SPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF540STRRPBF vs IRF540SPBF |
IRF540SPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | International Rectifier | IRF540STRRPBF vs IRF540SPBF |
IRF540STRLPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | Vishay Intertechnologies | IRF540STRRPBF vs IRF540STRLPBF |
IRF540STRLPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | International Rectifier | IRF540STRRPBF vs IRF540STRLPBF |
IRF540STRRPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | International Rectifier | IRF540STRRPBF vs IRF540STRRPBF |
IRF540S | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF540STRRPBF vs IRF540S |
IRF540STRLPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF540STRRPBF vs IRF540STRLPBF |
IRF540STRRPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF540STRRPBF vs IRF540STRRPBF |
IRF540S | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF540STRRPBF vs IRF540S |
IRF540S | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF540STRRPBF vs IRF540S |