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Part Details for IRF610PBF by Vishay Intertechnologies
Overview of IRF610PBF by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IRF610PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K2811
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Newark | Mosfet, N-Ch, 200V, 3.3A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:3.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF610PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1200 |
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$0.6160 / $0.9590 | Buy Now |
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DISTI #
63J7327
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Newark | N Channel Mosfet, 200V, 3.3A To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:3.3A, Drain Source Voltage Vds:200V, On Resistance Rds(On):1.5Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Msl:- Rohs Compliant: Yes |Vishay IRF610PBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.5990 | Buy Now |
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DISTI #
IRF610PBF
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Avnet Americas | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF610PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 8794 |
|
$0.5439 | Buy Now |
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DISTI #
844-IRF610PBF
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Mouser Electronics | MOSFET 200V N-CH HEXFET RoHS: Compliant | 5663 |
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$0.5400 / $0.7700 | Buy Now |
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DISTI #
70078852
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RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 1.5 Ohms, ID 3.3A, TO-220AB, PD 36W, VGS +/-20V | Vishay PCS IRF610PBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 1000 |
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$0.7400 / $0.8700 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 996Tube |
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$0.2950 / $0.3550 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.2950 / $0.3550 | Buy Now |
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Bristol Electronics | 202 |
|
RFQ | ||
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Quest Components | 800 |
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$1.1501 / $2.7880 | Buy Now | |
|
DISTI #
IRF610PBF
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TTI | MOSFET 200V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 11400 In Stock |
|
$0.3110 / $0.3910 | Buy Now |
Part Details for IRF610PBF
IRF610PBF CAD Models
IRF610PBF Part Data Attributes
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IRF610PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF610PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 36 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF610PBF
This table gives cross-reference parts and alternative options found for IRF610PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF610 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF610PBF vs IRF610 |
| IRF610 | 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF610PBF vs IRF610 |
| IRF610 | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF610PBF vs IRF610 |
| IRF610 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF610PBF vs IRF610 |