Datasheets
IRF6711STRPBF by:

Power Field-Effect Transistor, 19A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-4

Part Details for IRF6711STRPBF by International Rectifier

Overview of IRF6711STRPBF by International Rectifier

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IRF6711STRPBF

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRF6711STRPBF-ND
DigiKey MOSFET N-CH 25V 19A/84A DIRECTFT Min Qty: 341 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 4800
In Stock
  • 341 $0.8800
$0.8800 Buy Now
Rochester Electronics IRF6711 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 4800
  • 1 $0.8897
  • 25 $0.8719
  • 100 $0.8363
  • 500 $0.8007
  • 1,000 $0.7562
$0.7562 / $0.8897 Buy Now

Part Details for IRF6711STRPBF

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IRF6711STRPBF Part Data Attributes

IRF6711STRPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF6711STRPBF International Rectifier Power Field-Effect Transistor, 19A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 62 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.0038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6711STRPBF

This table gives cross-reference parts and alternative options found for IRF6711STRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6711STRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF6711STRPBF Power Field-Effect Transistor, 19A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-4 Infineon Technologies AG IRF6711STRPBF vs IRF6711STRPBF
IRF6711SPBF Power Field-Effect Transistor, 19A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 Infineon Technologies AG IRF6711STRPBF vs IRF6711SPBF
Part Number Description Manufacturer Compare
IRF6706S2TRPBF Power Field-Effect Transistor, 17A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6711STRPBF vs IRF6706S2TRPBF
IRF6706S2TR1PBF Power Field-Effect Transistor, 17A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6711STRPBF vs IRF6706S2TR1PBF
IRF7665S2TR1PBF Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6711STRPBF vs IRF7665S2TR1PBF
IRF7665S2TRPBF Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6711STRPBF vs IRF7665S2TRPBF
IRF7665S2TRPBF Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 Infineon Technologies AG IRF6711STRPBF vs IRF7665S2TRPBF
IRF6711SPBF Power Field-Effect Transistor, 19A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 Infineon Technologies AG IRF6711STRPBF vs IRF6711SPBF
IRF6711SPBF Power Field-Effect Transistor, 19A I(D), 25V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6711STRPBF vs IRF6711SPBF
AUIRF7665S2TR Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6711STRPBF vs AUIRF7665S2TR

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