Datasheets
IRF7306PBF by:

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7306PBF by International Rectifier

Overview of IRF7306PBF by International Rectifier

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Price & Stock for IRF7306PBF

Part # Distributor Description Stock Price Buy
DISTI # SMC-IRF7306PBF
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 65
RFQ

Part Details for IRF7306PBF

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IRF7306PBF Part Data Attributes:

IRF7306PBF International Rectifier
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IRF7306PBF International Rectifier Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description LEAD FREE, SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.6 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7306PBF

This table gives cross-reference parts and alternative options found for IRF7306PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7306PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7306TRPBF Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7306PBF vs IRF7306TRPBF
IRF7306 Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7306PBF vs IRF7306
IRF7306TR Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7306PBF vs IRF7306TR
Part Number Description Manufacturer Compare
FDS9926A Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7306PBF vs FDS9926A
IRF7403PBF Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7306PBF vs IRF7403PBF
IRF7406GPBF Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7306PBF vs IRF7406GPBF
IRF7416GPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7306PBF vs IRF7416GPBF
IRF7303TRPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 International Rectifier IRF7306PBF vs IRF7303TRPBF
IRF7404PBF Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7306PBF vs IRF7404PBF
IRF7416QPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7306PBF vs IRF7416QPBF
IRF7406PBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7306PBF vs IRF7406PBF
IRF9333PBF Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 International Rectifier IRF7306PBF vs IRF9333PBF
FDS6892A Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN Fairchild Semiconductor Corporation IRF7306PBF vs FDS6892A

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