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Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9199
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Newark | Mosfet, N-Ch, 20V, 16A, Soic, Transistor Polarity:N Channel, Continuous Drain Current Id:16A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.0047Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Infineon IRF7456TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
IRF7456TRPBF
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Avnet Americas | Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R (Alt: IRF7456TRPBF) RoHS: Compliant Min Qty: 2942 Package Multiple: 1 | 0 |
|
RFQ | |
DISTI #
68376173
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Verical | Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R Min Qty: 77 Package Multiple: 1 Date Code: 2201 | Americas - 2895 |
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$0.9319 / $1.1231 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 2316 |
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$0.8190 / $2.1840 | Buy Now |
DISTI #
IRF7456TRPBF
|
Avnet Americas | Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R (Alt: IRF7456TRPBF) RoHS: Compliant Min Qty: 2942 Package Multiple: 1 | 0 |
|
RFQ | |
DISTI #
IRF7456TRPBF
|
TME | Transistor: N-MOSFET, unipolar, 20V, 16A, 2.5W, SO8 Min Qty: 4000 | 0 |
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$0.4920 | RFQ |
DISTI #
IRF7456TRPBF
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Avnet Americas | Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R (Alt: IRF7456TRPBF) RoHS: Compliant Min Qty: 2942 Package Multiple: 1 | 0 |
|
RFQ | |
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Chip1Cloud | Trans MOSFET N-CH 20V 16A 8-Pin SOIC T/R / MOSFET N-CH 20V 16A 8-SOIC | 2540 |
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RFQ | |
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CHIPMALL.COM LIMITED | MOSFET N-CH 20V 16A 8SO | 4085 |
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$0.5400 / $0.9152 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 2905 |
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$0.5460 / $3.8170 | Buy Now |
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IRF7456TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7456TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SO-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.0065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7456TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7456TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7456TR | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7456TRPBF vs IRF7456TR |
IRF7456 | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7456TRPBF vs IRF7456 |
IRF7456TRPBF | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7456TRPBF vs IRF7456TRPBF |
IRF7456PBF | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | Infineon Technologies AG | IRF7456TRPBF vs IRF7456PBF |
IRF7456TR | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7456TRPBF vs IRF7456TR |