Datasheets
IRF7606TR by:

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

Part Details for IRF7606TR by Infineon Technologies AG

Overview of IRF7606TR by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IRF7606TR

Part # Distributor Description Stock Price Buy
DISTI # IRF7606CT-ND
DigiKey MOSFET P-CH 30V 3.6A MICRO8 Min Qty: 1 Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3867
In Stock
  • 1 $0.8000
  • 10 $0.6540
  • 100 $0.5725
  • 500 $0.5377
  • 1,000 $0.5300
$0.5300 / $0.8000 Buy Now
Win Source Electronics MOSFET P-CH 30V 3.6A MICRO8 68000
  • 120 $0.4240
  • 290 $0.3480
  • 450 $0.3370
  • 615 $0.3270
  • 795 $0.3160
  • 1,065 $0.2830
$0.2830 / $0.4240 Buy Now

Part Details for IRF7606TR

IRF7606TR CAD Models

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IRF7606TR Part Data Attributes

IRF7606TR Infineon Technologies AG
Buy Now Datasheet
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IRF7606TR Infineon Technologies AG Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MICRO-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.6 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 29 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7606TR

This table gives cross-reference parts and alternative options found for IRF7606TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7606TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7606PBF Power Field-Effect Transistor, Infineon Technologies AG IRF7606TR vs IRF7606PBF
IRF7606PBF Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 International Rectifier IRF7606TR vs IRF7606PBF
IRF7606TR Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7606TR vs IRF7606TR
Part Number Description Manufacturer Compare
IRF7606PBF Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 International Rectifier IRF7606TR vs IRF7606PBF
IRF7606PBF Power Field-Effect Transistor, Infineon Technologies AG IRF7606TR vs IRF7606PBF
IRF7606TRHR Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8 International Rectifier IRF7606TR vs IRF7606TRHR

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