Datasheets
IRF830ALPBF by:

Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Part Details for IRF830ALPBF by Vishay Intertechnologies

Overview of IRF830ALPBF by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF830ALPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF830ALPBF
Avnet Americas Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 - Tape and Reel (Alt: IRF830ALPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.3188
  • 2,000 $1.2765
  • 4,000 $1.2343
  • 6,000 $1.1843
  • 8,000 $1.1458
  • 10,000 $1.0920
  • 100,000 $1.0381
$1.0381 / $1.3188 Buy Now
DISTI # 844-IRF830ALPBF
Mouser Electronics MOSFET N-Chan 500V 5.0 Amp RoHS: Compliant 43
  • 1 $2.3400
  • 10 $1.9100
  • 100 $1.5200
  • 250 $1.4000
  • 500 $1.2700
$1.2700 / $2.3400 Buy Now
Future Electronics IRF830AL Series N-Channel 500 V 1.4 Ohm Through Hole Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $1.0400
  • 2,000 $1.0200
  • 3,000 $1.0000
  • 4,000 $0.9900
  • 5,000 $0.9600
$0.9600 / $1.0400 Buy Now
Future Electronics IRF830AL Series N-Channel 500 V 1.4 Ohm Through Hole Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $1.0400
  • 2,000 $1.0200
  • 3,000 $1.0000
  • 4,000 $0.9900
  • 5,000 $0.9600
$0.9600 / $1.0400 Buy Now
DISTI # IRF830ALPBF
TTI MOSFET N-Chan 500V 5.0 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $1.0700
  • 2,000 $1.0200
  • 4,000 $1.0000
  • 5,000 $0.9800
$0.9800 / $1.0700 Buy Now
DISTI # IRF830ALPBF
Avnet Americas Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 - Tape and Reel (Alt: IRF830ALPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.3188
  • 2,000 $1.2765
  • 4,000 $1.2343
  • 6,000 $1.1843
  • 8,000 $1.1458
  • 10,000 $1.0920
  • 100,000 $1.0381
$1.0381 / $1.3188 Buy Now
DISTI # IRF830ALPBF
TME Transistor: N-MOSFET, unipolar, 500V, 5A, Idm: 20A, 74W, I2PAK,TO262 Min Qty: 1 998
  • 1 $1.1900
  • 10 $1.0700
  • 50 $0.9500
  • 250 $0.8500
  • 1,000 $0.7900
$0.7900 / $1.1900 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Asia - 50
RFQ
Chip1Cloud MOSFET N-CH 500V 5A TO262-3 50000
RFQ
DISTI # IRF830ALPBF
EBV Elektronik Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 (Alt: IRF830ALPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 1 Weeks, 2 Days EBV - 0
Buy Now
DISTI # 9537554
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.6226
  • 10 $2.3566
  • 100 $1.8912
  • 500 $1.5588
  • 1,000 $1.3372
$1.3372 / $2.6226 Buy Now

Part Details for IRF830ALPBF

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IRF830ALPBF Part Data Attributes:

IRF830ALPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF830ALPBF Vishay Intertechnologies Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF830ALPBF

This table gives cross-reference parts and alternative options found for IRF830ALPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830ALPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF830ALPBF Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRF830ALPBF vs IRF830ALPBF
IRF830AL Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRF830ALPBF vs IRF830AL
IRF830ALPBF Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Siliconix IRF830ALPBF vs IRF830ALPBF

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