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Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF830ASPBF
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Avnet Americas | Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF830ASPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$1.0381 / $1.3188 | Buy Now |
DISTI #
844-IRF830ASPBF
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Mouser Electronics | MOSFET 500V N-CH HEXFET D2-PA RoHS: Compliant | 829 |
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$0.9050 / $1.9300 | Buy Now |
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Future Electronics | Single N-Channel 500 V 1.4 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.8750 / $1.0400 | Buy Now |
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Future Electronics | Single N-Channel 500 V 1.4 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.8750 / $1.0400 | Buy Now |
DISTI #
IRF830ASPBF
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TTI | MOSFET 500V N-CH HEXFET D2-PA RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.8700 / $0.9200 | Buy Now |
DISTI #
IRF830ASPBF
|
Avnet Americas | Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF830ASPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$1.0381 / $1.3188 | Buy Now |
DISTI #
IRF830ASPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 5A, Idm: 20A, 74W, D2PAK,TO263 Min Qty: 1 | 0 |
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$0.5850 / $0.8770 | RFQ |
DISTI #
IRF830ASPBF
|
Avnet Americas | Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: IRF830ASPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$1.0381 / $1.3188 | Buy Now |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1800 |
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RFQ | |
DISTI #
IRF830ASPBF
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EBV Elektronik | Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK (Alt: IRF830ASPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 1 Weeks, 2 Days | EBV - 0 |
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Buy Now |
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|
IRF830ASPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF830ASPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF830ASPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830ASPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF830ASTRLPBF | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | IRF830ASPBF vs IRF830ASTRLPBF |
IRF830ASPBF | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF830ASPBF vs IRF830ASPBF |
IRF830ASPBF | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRF830ASPBF vs IRF830ASPBF |
IRF830ASTRL | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRF830ASPBF vs IRF830ASTRL |
IRF830ASTRR | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | IRF830ASPBF vs IRF830ASTRR |