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Part Details for IRF9Z34NSTRLPBF by Infineon Technologies AG
Overview of IRF9Z34NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF9Z34NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9219
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Newark | Mosfet, P-Ch, 55V, 19A, To-263, Channel Type:P Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:19A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Qualification:-Rohs Compliant: Yes |Infineon IRF9Z34NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 525 |
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$0.7460 | Buy Now |
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DISTI #
86AK5394
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Newark | Mosfet, P-Ch, 55V, 19A, To-263 Rohs Compliant: Yes |Infineon IRF9Z34NSTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5220 / $0.6490 | Buy Now |
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DISTI #
IRF9Z34NSTRLPBFCT-ND
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DigiKey | MOSFET P-CH 55V 19A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5962 In Stock |
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$0.4797 / $1.2800 | Buy Now |
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DISTI #
IRF9Z34NSTRLPBF
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Avnet Americas | Trans MOSFET P-CH 55V 19A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF9Z34NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 800 |
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$0.4469 / $0.5426 | Buy Now |
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DISTI #
13AC9219
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Avnet Americas | Trans MOSFET P-CH 55V 19A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 13AC9219) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 0 |
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$0.8440 / $1.3300 | Buy Now |
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DISTI #
942-IRF9Z34NSTRLPBF
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Mouser Electronics | MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC RoHS: Compliant | 0 |
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$0.4790 / $1.1300 | Order Now |
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Future Electronics | Single P-Channel 55V 0.1 Ohm 35 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.4550 / $0.5000 | Buy Now |
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Future Electronics | Single P-Channel 55V 0.1 Ohm 35 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.4550 / $0.5000 | Buy Now |
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DISTI #
62496469
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Verical | Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R Min Qty: 52 Package Multiple: 1 Date Code: 2230 | Americas - 2052 |
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$0.5200 / $0.6125 | Buy Now |
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Bristol Electronics | 299 |
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RFQ |
Part Details for IRF9Z34NSTRLPBF
IRF9Z34NSTRLPBF CAD Models
IRF9Z34NSTRLPBF Part Data Attributes
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IRF9Z34NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9Z34NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9Z34NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF9Z34NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9Z34NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9Z34NSTRL | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRLPBF vs IRF9Z34NSTRL |
| IRF9Z34NSTRR | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRLPBF vs IRF9Z34NSTRR |
| IRF9Z34NSPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRLPBF vs IRF9Z34NSPBF |
| IRF9Z34NS | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRLPBF vs IRF9Z34NS |
| IRF9Z34NSPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF9Z34NSTRLPBF vs IRF9Z34NSPBF |
| IRF9Z34NS | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF9Z34NSTRLPBF vs IRF9Z34NS |
| IRF9Z34NSTRLPBF | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF9Z34NSTRLPBF vs IRF9Z34NSTRLPBF |