-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
61M6828
|
Newark | Mosfet, N-Ch, 60V, 160A, 175Deg C, 230W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:160A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFB3306PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 6735 |
|
$0.9210 / $1.0900 | Buy Now |
DISTI #
448-IRFB3306PBF-ND
|
DigiKey | MOSFET N-CH 60V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
5594 In Stock |
|
$0.8367 / $1.9900 | Buy Now |
DISTI #
IRFB3306PBF
|
Avnet Americas | Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3306PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.7811 / $0.9484 | Buy Now |
DISTI #
61M6828
|
Avnet Americas | Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 61M6828) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 4 Days Container: Bulk | 858 Partner Stock |
|
$1.1300 / $2.0300 | Buy Now |
DISTI #
942-IRFB3306PBF
|
Mouser Electronics | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg RoHS: Compliant | 3419 |
|
$0.8390 / $1.8900 | Buy Now |
DISTI #
70017949
|
RS | MOSFET, N Ch., 60V, 160A, 4.2 MOHM, 85 NC QG, TO-220AB, Pb-Free | Infineon IRFB3306PBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
|
$1.6400 / $1.9200 | RFQ |
|
Future Electronics | Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Non Compliant pbFree: No Min Qty: 50 Package Multiple: 1 Container: Tube | 2000Tube |
|
$0.5250 / $0.6200 | Buy Now |
|
Future Electronics | Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Non Compliant pbFree: No Min Qty: 50 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.8000 / $0.9500 | Buy Now |
|
Bristol Electronics | 171 |
|
RFQ | ||
|
Quest Components | 800 |
|
$1.3725 / $3.6600 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFB3306PBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFB3306PBF
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 184 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 160 A | |
Drain-source On Resistance-Max | 0.0042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Pulsed Drain Current-Max (IDM) | 620 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFB3306PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3306PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFP064V | Power Field-Effect Transistor, 130A I(D), 60V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | International Rectifier | IRFB3306PBF vs IRFP064V |
IRFP054VPBF | Power Field-Effect Transistor, 90A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFB3306PBF vs IRFP054VPBF |
IRFB4215PBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFB3306PBF vs IRFB4215PBF |
IRFB3306PBF | Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB3306PBF vs IRFB3306PBF |
IRFP064VPBF | Power Field-Effect Transistor, 90A I(D), 60V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFB3306PBF vs IRFP064VPBF |
IRFP054V | Power Field-Effect Transistor, 93A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | International Rectifier | IRFB3306PBF vs IRFP054V |