Datasheets
IRFB7446PBF by:

Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for IRFB7446PBF by Infineon Technologies AG

Overview of IRFB7446PBF by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IRFB7446PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFB7446PBF-ND
DigiKey MOSFET N-CH 40V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 2881
In Stock
  • 1 $1.4100
  • 50 $1.1334
  • 100 $0.8982
  • 500 $0.7614
  • 1,000 $0.6202
  • 2,000 $0.5839
  • 5,000 $0.5561
  • 10,000 $0.5304
$0.5304 / $1.4100 Buy Now
DISTI # IRFB7446PBF
Avnet Americas Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB7446PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.5823
  • 1,100 $0.5646
  • 2,100 $0.5470
  • 5,000 $0.5293
  • 10,000 $0.5117
  • 50,000 $0.4941
  • 100,000 $0.4764
$0.4764 / $0.5823 Buy Now
DISTI # 942-IRFB7446PBF
Mouser Electronics MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W RoHS: Compliant 1928
  • 1 $1.4000
  • 10 $1.1500
  • 100 $0.8980
  • 500 $0.7610
  • 1,000 $0.6200
  • 2,000 $0.5830
  • 5,000 $0.5550
  • 10,000 $0.5300
$0.5300 / $1.4000 Buy Now
Future Electronics Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.6200
  • 200 $0.5900
  • 1,000 $0.5650
  • 2,000 $0.5500
  • 6,250 $0.5200
$0.5200 / $0.6200 Buy Now
Future Electronics Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $0.6200
  • 200 $0.5900
  • 1,000 $0.5650
  • 2,000 $0.5500
  • 6,250 $0.5200
$0.5200 / $0.6200 Buy Now
Rochester Electronics Trench <= 40V RoHS: Compliant Status: Active Min Qty: 1 2650
  • 1 $0.6176
  • 25 $0.6052
  • 100 $0.5805
  • 500 $0.5558
  • 1,000 $0.5250
$0.5250 / $0.6176 Buy Now
DISTI # IRFB7446PBF
Avnet Americas Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB7446PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.5823
  • 1,100 $0.5646
  • 2,100 $0.5470
  • 5,000 $0.5293
  • 10,000 $0.5117
  • 50,000 $0.4941
  • 100,000 $0.4764
$0.4764 / $0.5823 Buy Now
DISTI # IRFB7446PBF
TME Transistor: N-MOSFET, unipolar, 40V, 123A, 99W, TO220AB Min Qty: 1 92
  • 1 $1.0200
  • 3 $0.9200
  • 10 $0.8100
  • 50 $0.7300
  • 250 $0.6800
$0.6800 / $1.0200 Buy Now
Ameya Holding Limited Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3 964
RFQ
DISTI # IRFB7446PBF
Avnet Americas Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB7446PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.5823
  • 1,100 $0.5646
  • 2,100 $0.5470
  • 5,000 $0.5293
  • 10,000 $0.5117
  • 50,000 $0.4941
  • 100,000 $0.4764
$0.4764 / $0.5823 Buy Now
Chip 1 Exchange INSTOCK 1300
RFQ
DISTI # SP001577760
EBV Elektronik Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001577760) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 53000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 41000
  • 1,000 $0.9552
  • 41,000 $0.8889
$0.8889 / $0.9552 Buy Now

Part Details for IRFB7446PBF

IRFB7446PBF CAD Models

IRFB7446PBF Part Data Attributes

IRFB7446PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB7446PBF Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 111 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 99 W
Pulsed Drain Current-Max (IDM) 492 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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