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TRANSISTOR 0.7 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, HVMDIP-3, FET General Purpose Power
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFD9110PBF-ND
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DigiKey | MOSFET P-CH 100V 700MA 4DIP Min Qty: 1 Lead time: 14 Weeks Container: Bulk |
2875 In Stock |
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$0.6480 / $1.5700 | Buy Now |
DISTI #
70459449
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RS | MOSFET P-CH 100V 0.7A 4-DIP | Siliconix / Vishay IRFD9110PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$0.9300 / $1.0900 | RFQ |
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Quest Components | 100V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | 82 |
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Buy Now | |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2500 |
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RFQ |
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IRFD9110PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFD9110PBF
Vishay Siliconix
TRANSISTOR 0.7 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, HVMDIP-3, FET General Purpose Power
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | DIP | |
Package Description | IN-LINE, R-PDIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.7 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 5.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFD9110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD9110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFD9110 | Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 | Vishay Intertechnologies | IRFD9110PBF vs IRFD9110 |
IRFD9110PBF | Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | IRFD9110PBF vs IRFD9110PBF |