Part Details for IRFH8307TRPBF by Infineon Technologies AG
Overview of IRFH8307TRPBF by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFH8307TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
32AK4945
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Newark | Mosfet, N-Ch, 30V, 0.1A, Pqfn Rohs Compliant: Yes |Infineon IRFH8307TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
V72:2272_13889798
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Arrow Electronics | Trans MOSFET N-CH 30V 42A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2405 Container: Cut Strips | Americas - 3975 |
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$1.1859 / $1.2615 | Buy Now |
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DISTI #
77720959
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Verical | Trans MOSFET N-CH 30V 42A 8-Pin PQFN EP T/R Min Qty: 11 Package Multiple: 1 Date Code: 2405 | Americas - 3975 |
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$1.1859 / $1.2522 | Buy Now |
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Bristol Electronics | 425 |
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RFQ | ||
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DISTI #
IRFH8307TRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 42A, 156W, PQFN5X6 Min Qty: 4000 | 0 |
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$1.0500 | RFQ |
Part Details for IRFH8307TRPBF
IRFH8307TRPBF CAD Models
IRFH8307TRPBF Part Data Attributes
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IRFH8307TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRFH8307TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-N5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.0021 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |