Datasheets
IRFI9630GPBF by:

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3

Part Details for IRFI9630GPBF by Vishay Intertechnologies

Overview of IRFI9630GPBF by Vishay Intertechnologies

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Price & Stock for IRFI9630GPBF

Part # Distributor Description Stock Price Buy
DISTI # 38K2540
Newark Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant: Yes |Vishay IRFI9630GPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 392
  • 1 $2.8600
  • 10 $2.3900
  • 25 $2.2400
  • 50 $2.0900
  • 100 $1.9300
  • 500 $1.6300
$1.6300 / $2.8600 Buy Now
DISTI # 63J6789
Newark P Ch Mosfet, -200V, 4.3A, To-220Fp, Transistor Polarity:P Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:4.3A, On Resistance Rds(On):0.8Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V, Msl:- Rohs Compliant: Yes |Vishay IRFI9630GPBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.3200
  • 2,000 $1.2300
  • 5,000 $1.1500
$1.1500 / $1.3200 Buy Now
DISTI # IRFI9630GPBF
Avnet Americas Trans MOSFET P-CH 200V 4.3A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: IRFI9630GPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.3960
  • 2,000 $1.3512
  • 4,000 $1.3065
  • 6,000 $1.2617
  • 8,000 $1.2129
  • 10,000 $1.1559
  • 100,000 $1.0989
$1.0989 / $1.3960 Buy Now
DISTI # 844-IRFI9630GPBF
Mouser Electronics MOSFET 200V P-CH HEXFET MOSFET RoHS: Compliant 1254
  • 1 $2.6500
  • 10 $2.1700
  • 100 $1.7600
  • 250 $1.6200
  • 500 $1.4700
  • 1,000 $1.2200
  • 2,000 $1.1900
  • 5,000 $1.1400
$1.1400 / $2.6500 Buy Now
Future Electronics Single P-Channel 200 V 35 W 29 nC Silicon Through Hole Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $1.1600
  • 2,000 $1.1400
  • 3,000 $1.1300
  • 4,000 $1.1200
$1.1200 / $1.1600 Buy Now
Future Electronics Single P-Channel 200 V 35 W 29 nC Silicon Through Hole Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $1.1600
  • 2,000 $1.1400
  • 3,000 $1.1300
  • 4,000 $1.1200
$1.1200 / $1.1600 Buy Now
DISTI # IRFI9630GPBF
TTI MOSFET 200V P-CH HEXFET MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube Americas - 0
  • 1,000 $1.2000
  • 2,000 $1.1800
  • 4,000 $1.1600
  • 10,000 $1.1300
$1.1300 / $1.2000 Buy Now
DISTI # IRFI9630GPBF
Avnet Americas Trans MOSFET P-CH 200V 4.3A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: IRFI9630GPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.3960
  • 2,000 $1.3512
  • 4,000 $1.3065
  • 6,000 $1.2617
  • 8,000 $1.2129
  • 10,000 $1.1559
  • 100,000 $1.0989
$1.0989 / $1.3960 Buy Now
DISTI # IRFI9630GPBF
TME Transistor: P-MOSFET, unipolar, -200V, -2.7A, 35W, TO220FP Min Qty: 1 1000
  • 1 $0.9100
  • 3 $0.8600
  • 10 $0.7700
  • 50 $0.7200
  • 250 $0.6700
$0.6700 / $0.9100 Buy Now
DISTI # IRFI9630GPBF
EBV Elektronik Trans MOSFET P-CH 200V 4.3A 3-Pin(3+Tab) TO-220 Full-Pak (Alt: IRFI9630GPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 8900
Buy Now
New Advantage Corporation SOT-23-5 RoHS: Compliant Min Qty: 1 Package Multiple: 50 6300
  • 100 $1.8500
  • 6,300 $1.7200
$1.7200 / $1.8500 Buy Now

Part Details for IRFI9630GPBF

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IRFI9630GPBF Part Data Attributes:

IRFI9630GPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFI9630GPBF Vishay Intertechnologies Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-220AB
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 480 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 17 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFI9630GPBF

This table gives cross-reference parts and alternative options found for IRFI9630GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFI9630GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFI9630GPBF Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 International Rectifier IRFI9630GPBF vs IRFI9630GPBF
IRFI9630G Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI9630GPBF vs IRFI9630G
Part Number Description Manufacturer Compare
IRFI9630GPBF Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 International Rectifier IRFI9630GPBF vs IRFI9630GPBF
IRFI9630G Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI9630GPBF vs IRFI9630G

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