Part Details for IRFIB7N50LPBF by Vishay Intertechnologies
Overview of IRFIB7N50LPBF by Vishay Intertechnologies
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFIB7N50LPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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Quest Components | 70 |
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$1.8750 / $3.7500 | Buy Now | |
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DISTI #
8658200
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Farnell | MOSFET, N, 500V, 6.8A, TO-220FP RoHS: Compliant Min Qty: 1 Lead time: 18 Weeks, 1 Days Container: Each | 0 |
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$1.1641 / $2.1599 | Buy Now |
Part Details for IRFIB7N50LPBF
IRFIB7N50LPBF CAD Models
IRFIB7N50LPBF Part Data Attributes
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IRFIB7N50LPBF
Vishay Intertechnologies
Buy Now
Datasheet
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IRFIB7N50LPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 6.8A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE, TO-220, FULL PACK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 550 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 6.8 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 27 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |