Datasheets
IRFL4310 by:

Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,

Part Details for IRFL4310 by International Rectifier

Overview of IRFL4310 by International Rectifier

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Price & Stock for IRFL4310

Part # Distributor Description Stock Price Buy
Bristol Electronics   2168
RFQ
Quest Components MOSFET Transistor, N-Channel, SOT-223 7030
  • 1 $1.6750
  • 717 $0.7705
  • 1,299 $0.7035
$0.7035 / $1.6750 Buy Now
Quest Components MOSFET Transistor, N-Channel, SOT-223 1261
  • 1 $1.0000
  • 14 $0.4500
  • 112 $0.3000
$0.3000 / $1.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, SOT-223 88
  • 1 $2.3200
  • 15 $1.4500
  • 53 $1.2760
$1.2760 / $2.3200 Buy Now
Quest Components MOSFET Transistor, N-Channel, SOT-223 423
  • 1 $2.3352
  • 172 $0.8173
  • 368 $0.7589
$0.7589 / $2.3352 Buy Now
Quest Components MOSFET Transistor, N-Channel, SOT-223 699
  • 1 $2.6800
  • 225 $1.2395
  • 485 $1.1055
$1.1055 / $2.6800 Buy Now
Chip1Cloud Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 5430
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 14
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now
Win Source Electronics Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 264633
  • 155 $0.3250
  • 375 $0.2670
  • 580 $0.2590
  • 800 $0.2500
  • 1,035 $0.2420
  • 1,385 $0.2170
$0.2170 / $0.3250 Buy Now

Part Details for IRFL4310

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IRFL4310 Part Data Attributes:

IRFL4310 International Rectifier
Buy Now Datasheet
Compare Parts:
IRFL4310 International Rectifier Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SOT-223, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature ULTRA LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2.1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL4310

This table gives cross-reference parts and alternative options found for IRFL4310. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL4310, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL4310 Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG IRFL4310 vs IRFL4310
IRFL4310PBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Infineon Technologies AG IRFL4310 vs IRFL4310PBF
IRFL4310TRPBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Infineon Technologies AG IRFL4310 vs IRFL4310TRPBF
Part Number Description Manufacturer Compare
IRLM120A Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation IRFL4310 vs IRLM120A
BSP372E6327 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG IRFL4310 vs BSP372E6327
BSP373NH6327XTSA1 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL4310 vs BSP373NH6327XTSA1
PMT200EN TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal NXP Semiconductors IRFL4310 vs PMT200EN
IRFL4310TRPBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Infineon Technologies AG IRFL4310 vs IRFL4310TRPBF
IRLM120AS62Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL4310 vs IRLM120AS62Z
IRLM120A Power Field-Effect Transistor onsemi IRFL4310 vs IRLM120A
IRFL110PBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL4310 vs IRFL110PBF
IRFL4310PBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Infineon Technologies AG IRFL4310 vs IRFL4310PBF
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies IRFL4310 vs IRFL110

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