Part Details for IRFP140 by Samsung Semiconductor
Overview of IRFP140 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFP140
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AC | 1 |
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$4.5000 | Buy Now |
Part Details for IRFP140
IRFP140 CAD Models
IRFP140 Part Data Attributes:
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IRFP140
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFP140
Samsung Semiconductor
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TO-3P | |
Package Description | TO-3P, 3 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 125 W | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 135 ns | |
Turn-on Time-Max (ton) | 133 ns |
Alternate Parts for IRFP140
This table gives cross-reference parts and alternative options found for IRFP140. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP140, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFP150 | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP140 vs IRFP150 |
BUZ345 | Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | IRFP140 vs BUZ345 |
IRFP150 | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP140 vs IRFP150 |
RFG40N10 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | IRFP140 vs RFG40N10 |
IRFP140 | 31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Rochester Electronics LLC | IRFP140 vs IRFP140 |
IRFP150 | 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | IRFP140 vs IRFP150 |
IRFP140 | 31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Intersil Corporation | IRFP140 vs IRFP140 |
IRFP150 | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Vishay Siliconix | IRFP140 vs IRFP150 |