Datasheets
IRFP140 by:

Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for IRFP140 by Samsung Semiconductor

Overview of IRFP140 by Samsung Semiconductor

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Price & Stock for IRFP140

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-247AC 1
  • 1 $4.5000
$4.5000 Buy Now

Part Details for IRFP140

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IRFP140 Part Data Attributes:

IRFP140 Samsung Semiconductor
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IRFP140 Samsung Semiconductor Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-3P
Package Description TO-3P, 3 PIN
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 230 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 135 ns
Turn-on Time-Max (ton) 133 ns

Alternate Parts for IRFP140

This table gives cross-reference parts and alternative options found for IRFP140. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP140, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP140 vs IRFP150
BUZ345 Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens IRFP140 vs BUZ345
IRFP150 Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP140 vs IRFP150
RFG40N10 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRFP140 vs RFG40N10
IRFP140 31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Rochester Electronics LLC IRFP140 vs IRFP140
IRFP150 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRFP140 vs IRFP150
IRFP140 31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Intersil Corporation IRFP140 vs IRFP140
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP140 vs IRFP150
Part Number Description Manufacturer Compare
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP140 vs IRFP150
2SK3151 Power Field-Effect Transistor, 0.025ohm, N-Channel, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Hitachi Ltd IRFP140 vs 2SK3151
BUZ345 Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens IRFP140 vs BUZ345
IRFP140 31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Intersil Corporation IRFP140 vs IRFP140
IRFP150 Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP140 vs IRFP150
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP140 vs IRFP150

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