Datasheets
IRFR020TR by:

Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for IRFR020TR by International Rectifier

Overview of IRFR020TR by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFR020TR

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 1685
  • 3 $1.8000
  • 13 $1.1700
  • 44 $0.6750
  • 150 $0.5760
  • 323 $0.5040
  • 765 $0.4680
$0.4680 / $1.8000 Buy Now
Bristol Electronics   30
RFQ
Quest Components 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3460
  • 1 $1.7750
  • 677 $0.8165
  • 1,226 $0.7455
$0.7455 / $1.7750 Buy Now
Quest Components 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 7880
  • 1 $1.1200
  • 2,748 $0.2800
  • 5,358 $0.2464
$0.2464 / $1.1200 Buy Now
Quest Components 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 1348
  • 1 $2.4000
  • 279 $0.6240
  • 1,283 $0.6000
$0.6000 / $2.4000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 100
Buy Now

Part Details for IRFR020TR

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IRFR020TR Part Data Attributes

IRFR020TR International Rectifier
Buy Now Datasheet
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IRFR020TR International Rectifier Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFR020TR

This table gives cross-reference parts and alternative options found for IRFR020TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR020TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHFR020TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR020TR vs SIHFR020TR-GE3
IRFR020-T1 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR020TR vs IRFR020-T1
SIHFR020TR-GE3 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR020TR vs SIHFR020TR-GE3
IRFR020TRL Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR020TR vs IRFR020TRL
IRFR020TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR020TR vs IRFR020TRPBF
IRFR020 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR020TR vs IRFR020
IRFR020 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR020TR vs IRFR020
Part Number Description Manufacturer Compare
SIHFR020TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR020TR vs SIHFR020TR-GE3
SIHFR020TR-GE3 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR020TR vs SIHFR020TR-GE3
IRFR020 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR020TR vs IRFR020
IRFR020 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR020TR vs IRFR020
IRFR020TRR Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR020TR vs IRFR020TRR
IRFR020-T1 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR020TR vs IRFR020-T1
IRFR020TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR020TR vs IRFR020TRPBF

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