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Part Details for IRFR1205TRPBF by Infineon Technologies AG
Overview of IRFR1205TRPBF by Infineon Technologies AG
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR1205TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
48W3426
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Newark | Mosfet Transistor, N Channel, 44 A, 55 V, 27 Mohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFR1205TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 549 |
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$0.4890 / $1.3000 | Buy Now |
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DISTI #
IRFR1205PBFCT-ND
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DigiKey | MOSFET N-CH 55V 44A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14316 In Stock |
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$0.4704 / $1.2500 | Buy Now |
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DISTI #
IRFR1205TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR1205TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4225 / $0.5164 | Buy Now |
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DISTI #
IRFR1205TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR1205TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4225 / $0.5164 | Buy Now |
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DISTI #
942-IRFR1205TRPBF
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Mouser Electronics | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC RoHS: Compliant | 19590 |
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$0.4700 / $1.2400 | Buy Now |
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DISTI #
E02:0323_00074761
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Arrow Electronics | Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Date Code: 2416 | Europe - 28000 |
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$0.1943 / $0.4062 | Buy Now |
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DISTI #
V72:2272_13892188
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Arrow Electronics | Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2207 Container: Cut Strips | Americas - 682 |
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$0.4498 / $1.2082 | Buy Now |
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DISTI #
E21:3489_00074761
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Arrow Electronics | Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2137 | Europe - 173 |
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$0.1948 / $0.4215 | Buy Now |
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DISTI #
70017744
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.027Ohm, ID 44A, D-Pak (TO-252AA),PD 107W | Infineon IRFR1205TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
|
$1.1000 / $1.3900 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.027 Ohm 65nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Container: Reel | 36000Reel |
|
$0.1910 / $0.2050 | Buy Now |
Part Details for IRFR1205TRPBF
IRFR1205TRPBF CAD Models
IRFR1205TRPBF Part Data Attributes
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IRFR1205TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR1205TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 107 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR1205TRPBF
This table gives cross-reference parts and alternative options found for IRFR1205TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1205TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR1205TRR | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRPBF vs IRFR1205TRR |
| IRFR1205 | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR1205TRPBF vs IRFR1205 |
| IRFR1205 | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRPBF vs IRFR1205 |
| IRFR1205TRPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRPBF vs IRFR1205TRPBF |
| IRFR1205TRL | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRPBF vs IRFR1205TRL |
| IRFR1205PBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRPBF vs IRFR1205PBF |
| IRFR1205TRLPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR1205TRPBF vs IRFR1205TRLPBF |
| IRFR1205TRLPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRPBF vs IRFR1205TRLPBF |
| IRFR1205TRRPBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR1205TRPBF vs IRFR1205TRRPBF |