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Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56AJ9896
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Newark | Mosfet, N-Ch, 200V, 4.8A, To-252 Rohs Compliant: Yes |Vishay IRFR220TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5439 |
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$0.5930 / $0.9540 | Buy Now |
DISTI #
63J6931
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Newark | N Channel Mosfet, 200V, 4.8A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:4.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.5W Rohs Compliant: Yes |Vishay IRFR220TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6040 / $0.7130 | Buy Now |
DISTI #
05W6856
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Newark | Mosfet, N Ch, 200V, 4.8A, To-252-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:4.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRFR220TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.6660 | Buy Now |
DISTI #
IRFR220TRPBF
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Avnet Americas | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR220TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 4000 |
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$0.3240 / $0.4116 | Buy Now |
DISTI #
IRFR220TRPBF
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Avnet Americas | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR220TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.3240 / $0.4008 | Buy Now |
DISTI #
844-IRFR220TRPBF
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Mouser Electronics | MOSFET N-Chan 200V 4.8 Amp RoHS: Compliant | 4352 |
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$0.2900 / $0.8700 | Buy Now |
DISTI #
E02:0323_00193532
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Arrow Electronics | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks Date Code: 2410 | Europe - 4000 |
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$0.3088 / $0.3578 | Buy Now |
DISTI #
A03:0893_00193532
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Arrow Electronics | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks Date Code: 2247 | Asia - 4000 |
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$0.6288 | Buy Now |
DISTI #
V72:2272_09218312
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Arrow Electronics | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2130 Container: Cut Strips | Americas - 1676 |
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$0.3221 / $0.4937 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.2950 / $0.3150 | Buy Now |
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IRFR220TRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR220TRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | not_compliant | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 4.8 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 19 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR220TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR220TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR220 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR220TRPBF vs IRFR220 |
IRFR220TRRPBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRFR220TRPBF vs IRFR220TRRPBF |
IRFR220TRLPBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRFR220TRPBF vs IRFR220TRLPBF |
SIHFR220-GE3 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR220TRPBF vs SIHFR220-GE3 |
IRFR220PBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR220TRPBF vs IRFR220PBF |